ﻻ يوجد ملخص باللغة العربية
We present measurements of the $D$ Raman mode in graphene and carbon nanotubes at different laser excitation energies. The Raman mode around 1050 - 1150,cm$^{-1}$ originates from a double-resonant scattering process of longitudinal acoustic (LA) phonons with defects. We investigate its dependence on laser excitation energy, on the number of graphene layers and on the carbon nanotube diameter. We assign this Raman mode to so-called inner processes with resonant phonons mainly from the $Gamma-K$ high-symmetry direction. The asymmetry of the $D$ mode is explained by additional contributions from phonons next to the $Gamma-K$ line. Our results demonstrate the importance of inner contributions in the double-resonance scattering process and add a fast method to investigate acoustic phonons in graphene and carbon nanotubes by optical spectroscopy.
We present a theoretical model to describe the double-resonant scattering process in arbitrary carbon nanotubes. We use this approach to investigate the defect-induced $D$ mode in CNTs and unravel the dependence of the $D$-mode frequency on the CNT d
We present an analysis of deep-UV Raman measurements of graphite, graphene and carbon nanotubes. For excitation energies above the strong optical absorption peak at the $M$ point in the Brillouin zone ($approx 4.7,text{eV}$), we partially suppress do
We derive the generalized magneto-absorption spectra for curved graphene nanorib- bons and carbon nanotubes by using the Peierls tight-binding model. The main spectral characteristics and the optical selection rules result from the cooperative or com
Three typical one-dimensional (1D)/quasi-1D nanocarbons, linear carbon chains, carbon nanotubes, and graphene nanoribbons have been proven to grow inside single-wall carbon nanotubes. This gives rise to three types of hybrid materials whose behaviour
We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treatment. At high fields, the dominant scattering is inter-band scattering