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Electronic components used in high energy physics experiments are subjected to a radiation background composed of high energy hadrons, mesons and photons. These particles can induce permanent and transient effects that affect the normal device operation. Ionizing dose and displacement damage can cause chronic damage which disable the device permanently. Transient effects or single event effects are in general recoverable with time intervals that depend on the nature of the failure. The magnitude of these effects is technology dependent with feature size being one of the key parameters. Analog to digital converters are components that are frequently used in detector front end electronics, generally placed as close as possible to the sensing elements to maximize signal fidelity. We report on radiation effects tests conducted on 17 commercially available analog to digital converters and extensive single event effect measurements on specific twelve and fourteen bit ADCs that presented high tolerance to ionizing dose. Mitigation strategies for single event effects (SEE) are discussed for their use in the large hadron collider environment.
We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we obs
We report on the evaluation of commercial electroless nickel phosphorus (NiP) coatings for ultracold neutron (UCN) transport and storage. The material potential of 50~$mu$m thick NiP coatings on stainless steel and aluminum substrates was measured to
Short Baseline Near Detector (SBND), which is a 260-ton LAr TPC as near detector in Short Baseline Neutrino (SBN) program, consists of 11,264 TPC readout channels. As an enabling technology for noble liquid detectors in neutrino experiments, cold ele
CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias
The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are discussed fo