اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدEvaluation of commercial ADC radiation tolerance for accelerator experiments
103
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Electronic components used in high energy physics experiments are subjected to a radiation background composed of high energy hadrons, mesons and photons. These particles can induce permanent and transient effects that affect the normal device operation. Ionizing dose and displacement damage can cause chronic damage which disable the device permanently. Transient effects or single event effects are in general recoverable with time intervals that depend on the nature of the failure. The magnitude of these effects is technology dependent with feature size being one of the key parameters. Analog to digital converters are components that are frequently used in detector front end electronics, generally placed as close as possible to the sensing elements to maximize signal fidelity. We report on radiation effects tests conducted on 17 commercially available analog to digital converters and extensive single event effect measurements on specific twelve and fourteen bit ADCs that presented high tolerance to ionizing dose. Mitigation strategies for single event effects (SEE) are discussed for their use in the large hadron collider environment.
قيم البحث
اقرأ أيضاً
We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we obs
erve less damage than was observed at room temperature.
We report on the evaluation of commercial electroless nickel phosphorus (NiP) coatings for ultracold neutron (UCN) transport and storage. The material potential of 50~$mu$m thick NiP coatings on stainless steel and aluminum substrates was measured to
be $V_F = 213(5.2)$~neV using the time-of-flight spectrometer ASTERIX at the Lujan Center. The loss per bounce probability was measured in pinhole bottling experiments carried out at ultracold neutron sources at Los Alamos Neutron Science Center and the Institut Laue-Langevin. For these tests a new guide coupling design was used to minimize gaps between the guide sections. The observed UCN loss in the bottle was interpreted in terms of an energy independent effective loss per bounce, which is the appropriate model when gaps in the system and upscattering are the dominate loss mechanisms, yielding a loss per bounce of $1.3(1) times 10^{-4}$. We also present a detailed discussion of the pinhole bottling methodology and an energy dependent analysis of the experimental results.
Short Baseline Near Detector (SBND), which is a 260-ton LAr TPC as near detector in Short Baseline Neutrino (SBN) program, consists of 11,264 TPC readout channels. As an enabling technology for noble liquid detectors in neutrino experiments, cold ele
ctronics developed for extremely low temperature (77K - 89K) decouples the electrode and cryostat design from the readout design. With front-end electronics integrated with detector electrodes, the noise is independent of the fiducial volume and about half as with electronics at room temperature. Digitization and signal multiplexing to high speed serial links inside cryostat result in large reduction in the quantity of cables (less outgassing) and the number of feed-throughs, therefore minimize the penetration and simplify the cryostat design. Being considered as an option for the TPC readout, several Commercial-Off-The-Shelf (COTS) ADC chips have been identified as good candidates for operation in cryogenic temperature after initial screening test. Because Hot Carrier Effects (HCE) degrades CMOS device lifetime, one candidate, ADI AD7274 fabricated in TSMC 350nm CMOS technology, of which lifetime at cryogenic temperature is studied. The lifetime study includes two phases, the exploratory phase and the validation phase. This paper describes the test method, test setup, observations in the exploratory phase and the validation phase. Based on the current test data, the preliminary lifetime projection of AD7274 is about 6.1 $times$ $10^6$ years at 2.5V operation at cryogenic temperature, which means the HCE degradation is negligible during the SBND service life.
CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias
pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad
The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are discussed fo
r commercial DC-DC converters, also tested in operation under magnetic field.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
