ترغب بنشر مسار تعليمي؟ اضغط هنا

One-Loop Dominance in the Imaginary Part of the Polarizability: Application to Blackbody and Non-Contact van der Waals Friction

43   0   0.0 ( 0 )
 نشر من قبل Ulrich Jentschura
 تاريخ النشر 2014
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Phenomenologically important quantum dissipative processes include black-body friction (an atom absorbs counterpropagating blue-shifted photons and spontaneously emits them in all directions, losing kinetic energy) and non-contact van der Waals friction (in the vicinity of a dielectric surface, the mirror charges of the constituent particles inside the surface experience drag, slowing the atom). The theoretical predictions for these processes are modified upon a rigorous quantum electrodynamic (QED) treatment, which shows that the one-loop correction yields the dominant contribution to the off-resonant, gauge-invariant, imaginary part of the atoms polarizability at room temperature, for typical atom-surface interactions. The tree-level contribution to the polarizability dominates at high temperature.

قيم البحث

اقرأ أيضاً

The atomic dipole polarizability, $alpha$, and the van der Waals (vdW) radius, $R_{rm vdW}$, are two key quantities to describe vdW interactions between atoms in molecules and materials. Until now, they have been determined independently and separate ly from each other. Here, we derive the quantum-mechanical relation $R_{rm vdW} = const. timesalpha^{1/7}$ which is markedly different from the common assumption $R_{rm vdW} propto alpha^{1/3}$ based on a classical picture of hard-sphere atoms. As shown for 72 chemical elements between hydrogen and uranium, the obtained formula can be used as a unified definition of the vdW radius solely in terms of the atomic polarizability. For vdW-bonded heteronuclear dimers consisting of atoms $A$ and $B$, the combination rule $alpha = (alpha_A + alpha_B)/2$ provides a remarkably accurate way to calculate their equilibrium interatomic distance. The revealed scaling law allows to reduce the empiricism and improve the accuracy of interatomic vdW potentials, at the same time suggesting the existence of a non-trivial relation between length and volume in quantum systems.
In inhomogeneous dielectric media the divergence of the electromagnetic stress is related to the gradients of varepsilon and mu, which is a consequence of Maxwells equations. Investigating spherically symmetric media we show that this seemingly unive rsal relationship is violated for electromagnetic vacuum forces such as the generalized van der Waals and Casimir forces. The stress needs to acquire an additional anomalous pressure. The anomaly is a result of renormalization, the need to subtract infinities in the stress for getting a finite, physical force. The anomalous pressure appears in the stress in media like dark energy appears in the energy-momentum tensor in general relativity. We propose and analyse an experiment to probe the van der Waals anomaly with ultracold atoms. The experiment may not only test an unusual phenomenon of quantum forces, but also an analogue of dark energy, shedding light where nothing is known empirically.
88 - Ya Feng , Henan Li , Taiki Inoue 2020
The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and furth er miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes, while n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
With the use of density functional theory calculations and addition of van der Waals correction, the graphene/HfS$_2$ heterojunction is constructed, and its electronic properties are examined thoroughly. This interface is determined as $n$-type Ohmic and the impacts of different amounts of interlayer distance and strain on the contact are shown using Schottky barrier height and electron injection efficiency. Dipole moment and workfunction of the interface are also altered when subjected to change in these two categories. The transition between Ohmic to Schottky contact is also depicted to be possible by applying a perpendicular electric field, proving this to be yet another useful method for tuning different properties of this structure. The conclusions given in this paper can exert an immense amount of influence on the development of two-dimensional HfS$_2$ based devices in the future.
Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, as recently demonstrated in systems of superconducting qubits. However, these qubits have large footprints due to their large capacitor electrodes needed to suppress losses by avoiding dielectric materials. This tactic hinders scaling by increasing parasitic coupling among circuit components, degrading individual qubit addressability, and limiting the spatial density of qubits. Here, we take advantage of the unique properties of the van der Waals (vdW) materials to reduce the qubit area by a factor of $>1000$ while preserving the required capacitance without increasing substantial loss. Our qubits combine conventional aluminum-based Josephson junctions with parallel-plate capacitors composed of crystalline layers of superconducting niobium diselenide (NbSe$_2$) and insulating hexagonal-boron nitride (hBN). We measure a vdW transmon $T_1$ relaxation time of 1.06 $mu$s, which demonstrates a path to achieve high-qubit-density quantum processors with long coherence times, and illustrates the broad utility of layered heterostructures in low-loss, high-coherence quantum devices.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا