اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدField-enhanced recombination at low temperatures in an organic photovoltaic blend
48
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We report on the non-trivial field dependence of charge carrier recombination in an organic blend at low temperatures. A new microwave resonance technique for monitoring charge recombination in organic semiconductors at low temperatures is applied in bulk heterojunction P3HT:PCBM blends with results showing that an external electric field can in fact increase recombination. Monte Carlo simulations suggest that this contradiction to conventional wisdom relates to electron-hole pairs that are separated at donor-acceptor interfaces where the electric field acts in synergy with their Coulomb attraction. For this behaviour to occur a critical initial separation of 5nm between the carriers is required.
قيم البحث
اقرأ أيضاً
Charge separation is a critical process for achieving high efficiencies in organic photovoltaic cells. The initial tightly bound excitonic electron-hole pair has to dissociate fast enough in order to avoid photocurrent generation and thus power conve
rsion efficiency loss via geminate recombination. Such process takes place assisted by transitional states that lie between the initial exciton and the free charge state. Due to spin conservation rules these intermediate charge transfer states typically have singlet character. Here we propose a donor-acceptor model for a generic organic photovoltaic cell in which the process of charge separation is modulated by a magnetic field which tunes the energy levels. The impact of a magnetic field is to intensify the generation of charge transfer states with triplet character via inter-system crossing. As the ground state of the system has singlet character, triplet states are recombination-protected, thus leading to a higher probability of successful charge separation. Using the open quantum systems formalism we demonstrate that not only the population of triplet charge transfer states grows in the presence of a magnetic field, but also how the power outcome of an organic photovoltaic cell is in that way increased.
We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems on GaAs/AlGaAs heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional non-magnetic high-mobi
lity 2D systems, the thermopower in our devices increases with decreasing temperature below 0.3 K, reaching values in excess of 100 $mu$V/K, thus exceeding the free electron estimate by more than two orders of magnitude. With support from a parallel independent study of the local density of states, we suggest such a phenomenon to be linked to intrinsic localized states and many-body spin correlations in the system.
The novel field-induced re-entrant phase in multiferroic hexagonal HoMnO3 is investigated to lower temperatures by dc magnetization, ac susceptibility, and specific heat measurements at various magnetic fields. Two new phases have been unambiguously
identified below the Neel transition temperature, TN=76 K, for magnetic fields up to 50 kOe. The existence of an intermediate phase between the P[6]_3[c]m and P[6]_3c[m] magnetic structures (previously predicted from dielectric measurements) was confirmed and the magnetic properties of this phase have been investigated. At low temperatures (T<5 K) a dome shaped phase boundary characterized by a magnetization jump and a narrow heat capacity peak was detected between the magnetic fields of 5 kOe and 18 kOe. The transition across this phase boundary is of first order and the magnetization and entropy jumps obey the magnetic analogue of the Clausius-Clapeyron relation. Four of the five low-temperature phases coexist at a tetracritical point at 2 K and 18 kOe. The complex magnetic phase diagram so derived provides an informative basis for unraveling the underlying driving forces for the occurrence of the various phases and the coupling between the different orders.
Thermal transport properties of amorphous materials at low temperatures are governed by the interaction between phonons and localized excitations referred to as tunneling two level systems (TLS). The temperature variation of the thermal conductivity
of these amorphous materials is considered as universal and is characterized by a quadratic power law. This is well described by the phenomenological TLS model even though its microscopic explanation is still elusive. Here, by scaling down to the nanometer scale amorphous systems much below the bulk phonon-TLS mean free path, we probed the robustness of that model in restricted geometry systems. Using very sensitive thermal conductance measurements, we demonstrate that the temperature dependence of the thermal conductance of silicon nitride nanostructures remains mostly quadratic independently of the nanowire section. It is not following the cubic power law in temperature as expected in a Casimir-Ziman regime of boundary limited thermal transport. This shows a thermal transport counter intuitively dominated by phonon-TLS interactions and not by phonon-boundary scattering in the nanowires. This could be ascribed to an unexpected high density of TLS on the surfaces which still dominates the phonon diffusion processes at low temperatures and explains why the universal quadratic temperature dependence of thermal conductance still holds for amorphous nanowires.
The formation of bound electron-hole pairs, also called charge-transfer (CT) states, in organic-based photovoltaic devices is one of the dominant loss mechanisms hindering performance. While CT state dynamics following electron transfer from donor to
acceptor have been widely studied, there is not much known about the dynamics of bound CT states produced by hole transfer from the acceptor to the donor. In this letter, we compare the dynamics of CT states formed in the different charge-transfer pathways in a range of model systems. We show that the nature and dynamics of the generated CT states are similar in the case of electron and hole transfer. However the yield of bound and free charges is observed to be strongly dependent on the HOMOD-HOMOA and LUMOD-LUMOA energy differences of the material system. We propose a qualitative model in which the effects of static disorder and sampling of states during the relaxation determine the probability of accessing CT states favourable for charge separation.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
