اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدElectron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
146
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}rm{Si}$ ($p_{rm{Si}}=4.7%$) is about 4 times larger than that of $^{13}{rm C}$ ($p_{rm{C}}=1.1%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field ($B>300~rm{Gauss}$) is longer than that of nitrogen-vacancy (NV) centers in $^{13}{rm C}$ nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.
قيم البحث
اقرأ أيضاً
The decoherence of mixed electron-nuclear spin qubits is a topic of great current importance, but understanding is still lacking: while important decoherence mechanisms for spin qubits arise from quantum spin bath environments with slow decay of corr
elations, the only analytical framework for explaining observed sharp variations of decoherence times with magnetic field is based on the suppression of classical noise. Here we obtain a general expression for decoherence times of the central spin system which exposes significant differences between quantum-bath decoherence and decoherence by classical field noise. We perform measurements of decoherence times of bismuth donors in natural silicon using both electron spin resonance (ESR) and nuclear magnetic resonance (NMR) transitions, and in both cases find excellent agreement with our theory across a wide parameter range. The universality of our expression is also tested by quantitative comparisons with previous measurements of decoherence around `optimal working points or `clock transitions where decoherence is strongly suppressed. We further validate our results by comparison to cluster expansion simulations.
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $
pm$1 and $pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.
The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvement
s of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P qubit in enriched $^{28}$Si, we show that the abnormally long $T_2^*$ is due to the controllable freezing of the dynamics of the residual $^{29}$Si nuclei close to the donor. Our conclusions are supported by a nearly parameter-free modeling of the $^{29}$Si nuclear spin dynamics, which reveals the degree of back-action provided by the electron spin as it interacts with the nuclear bath. This study clarifies the limits of ergodic assumptions in analyzing many-body spin-problems under conditions of strong, frequent measurement, and provides novel strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors.
A major problem facing the realisation of scalable solid-state quantum computing is that of overcoming decoherence - the process whereby phase information encoded in a qubit is lost as the qubit interacts with its environment. Due to the vast number
of environmental degrees of freedom, it is challenging to accurately calculate decoherence times $T_2$, especially when the qubit and environment are highly correlated. Hybrid or mixed electron-nuclear spin qubits, such as donors in silicon, possess optimal working points (OWPs) which are sweet-spots for reduced decoherence in magnetic fields. Analysis of sharp variations of $T_2$ near OWPs was previously based on insensitivity to classical noise, even though hybrid qubits are situated in highly correlated quantum environments, such as the nuclear spin bath of $^{29}$Si impurities. This presented limited understanding of the decoherence mechanism and gave unreliable predictions for $T_2$. I present quantum many-body calculations of the qubit-bath dynamics, which (i) yield $T_2$ for hybrid qubits in excellent agreement with experiments in multiple regimes, (ii) elucidate the many-body nature of the nuclear spin bath and (iii) expose significant differences between quantum-bath and classical-field decoherence. To achieve these, the cluster correlation expansion was adapted to include electron-nuclear state mixing. In addition, an analysis supported by experiment was carried out to characterise the nuclear spin bath for a bismuth donor as the hybrid qubit, a simple analytical formula for $T_2$ was derived with predictions in agreement with experiment, and the established method of dynamical decoupling was combined with operating near OWPs in order to maximise $T_2$. Finally, the decoherence of a $^{29}$Si spin in proximity to the hybrid qubit was studied, in order to establish the feasibility for its use as a quantum register.
Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While singl
e-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum non-demolition (QND) implementation. Unlike conventional counterparts, the QND spin readout imposes minimal disturbance to the probed spin polarization and can therefore be repeated to extinguish measurement errors. However, it has remained elusive for an electron spin in silicon as it involves exquisite exposure of the system to the external circuitry for readout while maintaining the coherence and integrity of the qubit. Here we show that an electron spin qubit in silicon can be measured in a highly non-demolition manner by probing another electron spin in a neighboring dot Ising-coupled to the qubit spin. The high non-demolition fidelity (99% on average) enables over 20 readout repetitions of a single spin state, yielding an overall average measurement fidelity of up to 95% within 1.2 ms. We further demonstrate that our repetitive QND readout protocol can realize heralded high-fidelity (> 99.6%) ground-state preparation. Our QND-based measurement and preparation, mediated by a second qubit of the same kind, will allow for a new class of quantum information protocols with electron spins in silicon without compromising the architectural homogeneity.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
