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Using the tight-binding model and the generalized Greens function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically investigated. We show how the quantum interference sources, different contact positions and local gate, can control the transmission characteristics of the electrode/molecule/electrode junction. We also study the occurrence of anti-resonant states in the transmission probability function using a simple graphical scheme (introduced in Ref.[Phys. Chem. Chem. Phys, 2011, 13, 1431]) for different geometries of the contacts between the benzene molecule and semiconductor(silicon and titanium dioxide) electrodes.
Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam splitters that manipulate electrons instead of light. Until now, however,
Based on tight-binding model and a generalized Greens function method in Landauer-Buttiker formalism, the effects of quantum interference (QI) on the noise power and Fano factor of an armchair graphene nanoribbon (aGNR) sandwiched between infinite si
Nonlinear charge transport in strongly coupled semiconductor superlattices is described by Wigner-Poisson kinetic equations involving one or two minibands. Electron-electron collisions are treated within the Hartree approximation whereas other inelas
We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whethe
We demonstrate the existence of a novel breather mode in the self-consistent electron dynamics of a semiconductor quantum well. A non-perturbative variational method based on quantum hydrodynamics is used to determine the salient features of the elec