ﻻ يوجد ملخص باللغة العربية
We study the spin and charge accumulation in junctions between a superconductor and a ferromagnet or a normal metal in the presence of a Zeeman magnetic field, when the junction is taken out of equilibrium by applying a voltage bias. We write down the most general form for the spin and charge current in such junctions, taking into account all spin-resolved possible tunneling processes. We make use of these forms to calculate the spin accumulation in NS junctions subjected to a DC bias, and to an AC bias, sinusoidal or rectangular. We observe that in the limit of negligeable changes on the superconducting gap, the NS dynamical conductance is insensitive to spin imbalance. Therefore to probe the spin accumulation in the superconductor, one needs to separate the injection and detection point, i. e. the electrical spin detection must be non-local. We address also the effect of the spin accumulation induced in the normal leads by driving a spin current and its effects on the detection of the spin accumulation in the superconductor. Finally, we investigate the out-of-equilibrium spin susceptibility of the SC, and we show that it deviates drastically from its equilibrium value.
Using systematic effective field theory, we explore the properties of antiferromagnetic films subjected to magnetic and staggered fields that are either mutually aligned or mutually orthogonal. We provide low-temperature series for the entropy densit
Magnetic oscillations of Dirac surface states of topological insulators are expected to be associated with the formation of Landau levels or the Aharonov-Bohm effect. We instead study the conductance of Dirac surface states subjected to an in-plane m
We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the general relation, S_V=2eIR^2coth(eV/2kT), for two voltage regions in
Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin
Magnetic barriers in graphene are not easily tunable. However, introducing both electric and magnetic fields, provides tunable and far more controllable electronic states in graphene. Here we study such systems. A one-dimensional channel can be forme