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تسجيل مستخدم جديدSuperconducting properties of novel BiSe$_{2}$-based layered LaO$_{1-x}$F$_{x}$BiSe$_{2}$ single crystals
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F-doped LaOBiSe$_{2}$ superconducting single crystals with typical size of 2$times$4$times$0.2 mm$^{3}$ are successfully grown by flux method and the superconducting properties are studied. Both the superconducting transition temperature and the shielding volume fraction are effectively improved with fluorine doping. The LaO$_{0.48}$F$_{0.52}$BiSe$_{1.93}$ sample exhibits zero-resistivity at 3.7 K, which is higher than that of the LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$ polycrystalline sample (2.4K). Bulk superconductivity is confirmed by a clear specific-heat jump at the associated temperature. The samples exhibit strong anisotropy and the anisotropy parameter is about 30, as estimated by the upper critical field and effective mass model
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We report density functional calculations of the electronic structure, Fermi surface, phonon spectrum and electron--phonon coupling for newly discovered superconductor LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$. Significant similarity between LaO$_{0.5}$F$_{0.5}
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We use core level and valence band soft x-ray photoemission spectroscopy (SXPES) to investigate electronic structure of new BiS$_{2}$ layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$. Core level spectra of doped samples show a new spectral feature
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A good description of the electronic structure of BiS$_{2}$-based superconductors is essential to understand their phase diagram, normal state and superconducting properties. To describe the first reports of normal state electronic structure features
from angle resolved photoemission spectroscopy (ARPES) in LaO$_{1-x}$F$_{x}$BiS$_{2}$, we used a minimal microscopic model to study their low energy properties. It includes the two effective tight-binding bands proposed by Usui et al [Phys.Rev.B 86, 220501(R)(2012)], and we added moderate intra- and inter-orbital electron correlations related to Bi-($p_{Y}$, $p_{X}$) and S-($p_{Y}$, $p_{X}$) orbitals. We calculated the electron Greens functions using their equations of motion, which we decoupled in second-order of perturbations on the correlations. We determined the normal state spectral density function and total density of states for LaO$_{1-x}$F$_{x}$BiS$_{2}$, focusing on the description of the k-dependence, effect of doping, and the prediction of the temperature dependence of spectral properties. Including moderate electron correlations, improves the description of the few experimental ARPES and soft X-ray photoemission data available for LaO$_{1-x}$F$_{x}$BiS$_{2}$. Our analytical approximation enabled us to calculate the spectral density around the conduction band minimum at $vec{k}_{0}=(0.45pi,0.45pi)$, and to predict the temperature dependence of the spectral properties at different BZ points, which might be verified by temperature dependent ARPES.
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