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We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi$_{2}$Se$_{3}$. Theoretical calculations are performed based on a realistic tight-binding model for Bi$_{2}$Se$_{3}$. We study both three dimensional devices, which exploit the surface states of Bi$_{2}$Se$_{3}$, as well as two-dimensional devices, which exploit the edge states of thin Bi$_{2}$Se$_{3}$ strips. We demonstrate that the material properties of Bi$_{2}$Se$_{3}$ allow a TMR ratio at room temperature of the order of 1000%. Analytical formulas are derived that allow a quick estimate of the achievable TMR ratio in these devices. The devices can be used to measure the spin polarization of the topological surface states as an alternative to spin-ARPES. Unlike TMR devices based on magnetic tunnel junctions the present devices avoid the use of a second ferromagnetic electrode whose magnetization needs to be pinned.
We have performed scanning tunneling microscopy and differential tunneling conductance ($dI/dV$) mapping for the surface of the three dimensional topological insulator Bi$_{2}$Se$_{3}$. The fast Fourier transformation applied to the $dI/dV$ image sho
Topological insulators are expected to be a promising platform for novel quantum phenomena, whose experimental realizations require sophisticated devices. In this Technical Review, we discuss four topics of particular interest for TI devices: topolog
Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi$_2$Se$_3$ ultrathin films. At two-dimensional limit, bulk electrons becomes quantized and the quan
Circular photogalvanic currents are a promising new approach for spin-optoelectronics. To date, such currents have only been induced in topological insulator flakes or extended films. It is not clear whether they can be generated in nanodevices. In t
We use optical pump--THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi$_2$Se$_3$ films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films