اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدCavity-Enabled Self-Electro-Optic Bistability in Silicon Photonics
448
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We propose a new type of bistable device for silicon photonics, using the self-electro-optic effect within an optical cavity. Since the bistability does not depend on the intrinsic optical nonlinearity of the material, but is instead engineered by means of an optoelectronic feedback, it appears at low optical powers. This bistable device satisfies all the basic criteria required in an optical switch to build a scalable digital optical computing system.
قيم البحث
اقرأ أيضاً
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addre
ssing both electrical and optical device rules. However the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits scaling density. Furthermore, modulators bear a fundamental a frequency-response to energy-sensitive trade-off, a limitation that can be overcome with coupling-based modulators where the temporal response speed is decoupled from the optical cavity photo lifetime. Thus, the coupling effect to the resonator is modulated rather then tuning the index of the resonator itself. However, the weak electro-optic response of silicon limits such coupling modulator performance, since the micrometer-short overlap region of the waveguide-bus and a microring resonator is insufficient to induce signal modulation. To address these limitations, here we demonstrate a coupling-controlled electro-optic modulator by heterogeneously integrating a dual-gated indium-tin-oxide (ITO) phase shifter placed at the silicon microring-bus coupler region. Our experimental modulator shows about 4 dB extinction ratio on resonance, and a about 1.5 dB off resonance with a low insertion loss of 0.15 dB for a just 4 {mu}m short device demonstrating a compact high 10:1 modulation-to-loss ratio. In conclusion we demonstrate a coupling modulator using strongly index-changeable materials enabling compact and high-performing modulators using semiconductor foundry-near materials.
Electro-optic frequency combs were employed to rapidly interrogate an optomechanical sensor, demonstrating spectral resolution substantially exceeding that possible with a mode-locked frequency comb. Frequency combs were generated using an integrated
-circuit-based direct digital synthesizer and utilized in a self-heterodyne configuration. Unlike approaches based upon laser locking or sweeping, the present approach allows rapid, parallel measurements of full optical cavity modes, large dynamic range of sensor displacement, and acquisition across a wide frequency range between DC and 500 kHz. In addition to being well suited to measurements of cavity optomechanical sensors, this optical frequency comb-based approach can be utilized for interrogation in a wide range of physical and chemical sensors.
Since the first experimental observation of optical Airy beams, various applications ranging from particle and cell micromanipulation to laser micromachining have exploited their non-diffracting and accelerating properties. The later discovery that A
iry beams can self-heal after being blocked by an obstacle further proved their robustness to propagate under scattering and disordered environment. Here, we report the generation of Airy beams on an integrated silicon photonic chip and demonstrate that the on-chip 1D Airy beams preserve the same properties as the 2D beams. The 1D meta-optics used to create the Airy beam has the size of only 3 by 16 microns, at least three orders of magnitude smaller than the conventional optic. The on-chip self-healing beams demonstrated here could potentially enable diffraction-free light routing for on-chip optical networks and high-precision micromanipulation of bio-molecules on an integrated photonic chip.
We phase-coherently measure the frequency of continuous-wave (CW) laser light by use of optical-phase modulation and f-2f nonlinear interferometry. Periodic electro-optic modulation (EOM) transforms the CW laser into a continuous train of picosecond
optical pulses. Subsequent nonlinear-fiber broadening of this EOM frequency comb produces a supercontinuum with 160 THz of bandwidth. A critical intermediate step is optical filtering of the EOM comb to reduce electronic-noise-induced decoherence of the supercontinuum. Applying f-2f self-referencing with the supercontinuum yields the carrier-envelope offset frequency of the EOM comb, which is precisely the difference of the CW laser frequency and an exact integer multiple of the EOM pulse repetition rate. Here we demonstrate absolute optical frequency metrology and synthesis applications of the self-referenced CW laser with <5E-14 fractional accuracy and stability.
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices
on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fully PIC-compatible integration of BTO-based devices and is, as shown, scalable to 200 mm wafers. The PIC-integrated BTO Mach-Zehnder modulators outperform conventional Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices show excellent V{pi}L (0.2 Vcm) and V{pi}L{alpha} (1.3 VdB), work at high speed (25 Gbps), and can be tuned at low static power consumption (100 nW). Our concept demonstrates the possibility of monolithic integration of Pockels-based electro-optic modulators in advanced silicon photonic platforms. {c} 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. https://www.osapublishing.org/jlt/abstract.cfm?URI=jlt-37-5-1456 Publication date: March 1, 2019 This work was supported in part by the European Union (EU) under Horizon 2020 grant agreements no. H2020-ICT-2015-25-688579 (PHRESCO) and H2020-ICT-2017-1-780997 (plaCMOS).
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
