ترغب بنشر مسار تعليمي؟ اضغط هنا

Minimal graphene thickness for wear protection of diamond

47   0   0.0 ( 0 )
 نشر من قبل Annalisa Fasolino
 تاريخ النشر 2014
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We show by means of molecular dynamics simulations that graphene is an excellent coating for diamond. The transformation of diamond to amorphous carbon while sliding under pressure can be prevented by having at least two graphene layers between the diamond slabs, making this combination of materials suitable for new coatings and micro- and nanoelectromechanical devices. Grain boundaries, vacancies and adatoms on the diamond surface do not change this picture whereas reactive adsorbates between the graphene layers may have detrimental effects. Our findings can be explained by the properties of layered materials where the weak interlayer bonding evolves to a strong interlayer repulsion under pressure.

قيم البحث

اقرأ أيضاً

The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related scattering is r educed in the higher layers. The carrier density dependence of the mobility is qualitatively different in thin and thick graphene, with the transition occurring at about 2 layers. The mobility increases with carrier density in thick graphene, similar to multi-layer graphene exfoliated from natural graphite, suggesting that the individual layers are still electrically coupled in spite of reports recording non-Bernal stacking order in C-face grown graphene. The Hall coefficient peak value is reduced in thick graphene due to the increased density of states. A reliable and rapid characterization tool for the layer number is therefore highly desirable. To date, AFM height determination and Raman scattering are typically used since the optical contrast of graphene on SiC is weak. However, both methods suffer from low throughput. We show that the scanning electron microscopy (SEM) contrast can give similar results with much higher throughput.
103 - J. J. Palacios 2010
It is a fact that the minimal conductivity $sigma_0$ of most graphene samples is larger than the well-established universal value for ideal graphene $4e^2/pi h$; in particular, larger by a factor $gtrsimpi$. Despite intense theoretical activity, this fundamental issue has eluded an explanation so far. Here we present fully atomistic quantum mechanical estimates of the graphene minimal conductivity where electron-electron interactions are considered in the framework of density functional theory. We show the first conclusive evidence of the dominant role on the minimal conductivity of charged impurities over ripples, which have no visible effect. Furthermore, in combination with the logarithmic scaling law for diffusive metallic graphene, we ellucidate the origin of the ubiquitously observed minimal conductivity in the range $8e^2/h > sigma_0 gtrsim 4e^2/h$.
The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely unexplored. Here we fabricate graphene field-effect transistors (GFETs) directly on the diamond surface and characterise them via NV microscopy. The current density within the gated graphene is reconstructed from NV magnetometry under both mostly p- and n-type doping, but the exact doping level is found to be affected by the measurements. Additionally, we observe a surprisingly large modulation of the electric field at the diamond surface under an applied gate potential, seen in NV photoluminescence and NV electrometry measurements, suggesting a complex electrostatic response of the oxide-graphene-diamond structure. Possible solutions to mitigate these effects are discussed.
The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the el ectrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Perot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.
Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a band bending junction , a new type of semiconductor homojunction whose surface potential landscape depends solely on a difference in thickness between the two semiconductor regions atop a buried heterojunction interface. Using MoS2 on Au to form a buried heterojunction interface, we find that lateral surface potential differences can arise in MoS2 from the local extent of vertical band bending in thin and thick MoS2 regions. Using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of photogenerated charge carriers and find that lateral carrier separation is enabled by a band bending junction, which is confirmed with semiconductor transport simulations. Band bending junctions may therefore enable new electronic and optoelectronic devices in Van der Waals materials that rely on thickness variations rather than doping to separate charge carriers.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا