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We show by means of molecular dynamics simulations that graphene is an excellent coating for diamond. The transformation of diamond to amorphous carbon while sliding under pressure can be prevented by having at least two graphene layers between the diamond slabs, making this combination of materials suitable for new coatings and micro- and nanoelectromechanical devices. Grain boundaries, vacancies and adatoms on the diamond surface do not change this picture whereas reactive adsorbates between the graphene layers may have detrimental effects. Our findings can be explained by the properties of layered materials where the weak interlayer bonding evolves to a strong interlayer repulsion under pressure.
The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related scattering is r
It is a fact that the minimal conductivity $sigma_0$ of most graphene samples is larger than the well-established universal value for ideal graphene $4e^2/pi h$; in particular, larger by a factor $gtrsimpi$. Despite intense theoretical activity, this
The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely unexplored.
The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the el
Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a band bending junction