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Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To take advantage of the characteristics, the precise control of the orientation of the N-V axis in the lattice is essential. Here we show that the orientation of more than 99 % of the NV centers can be aligned along the [111]-axis by CVD homoepitaxial growth on (111)-substrates. We also discuss about mechanisms of the alignment. Our result enables a fourfold improvement in magnetic-field sensitivity and opens new avenues to the optimum design of NV center devices.
Nitrogen-vacancy (NV) centers in diamond have attracted a great deal of attention because of their possible use in information processing and electromagnetic sensing technologies. We examined theatomistic generation mechanism for the NV defect aligne
Synthetic diamond production is key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes
The nitrogen-vacancy (NV) center in diamond is a widely-utilized system due to its useful quantum properties. Almost all research focuses on the negative charge state (NV$^-$) and comparatively little is understood about the neutral charge state (NV$
The electrical conductivity of a material can feature subtle, nontrivial, and spatially-varying signatures with critical insight into the materials underlying physics. Here we demonstrate a conductivity imaging technique based on the atom-sized nitro
Detection of AC magnetic fields at the nanoscale is critical in applications ranging from fundamental physics to materials science. Isolated quantum spin defects, such as the nitrogen-vacancy center in diamond, can achieve the desired spatial resolut