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تسجيل مستخدم جديدSpin Dependent Lifetimes and Spin-orbit Hybridization Points in Heusler Compounds
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We present an ab initio calculation of the k and spin-resolved electronic lifetimes in the half-metallic Heusler compounds Co(2)MnSi and Co(2)FeSi. We determine the spin-flip and spin-conserving contributions to the lifetimes and study in detail the behavior of the lifetimes around states that are strongly spin-mixed by spin-orbit coupling. We find that, for non-degenerate bands, the spin mixing alone does not determine the energy dependence of the (spin-flip) lifetimes. Qualitatively, the lifetimes reflect the lineup of electron and hole bands. We predict that different excitation conditions lead to drastically different spin-flip dynamics of excited electrons and may even give rise to an enhancement of the non-equilibrium spin polarization.
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This paper has been withdrawn.
The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applica
tions as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Greens function method we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage ($I-V$) characteristics with zero threshold voltage $V_T$. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between $30$ and $10^5$. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds.
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