اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدTuning order-by-disorder multiferroicity in CuO by doping
222
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The high Curie temperature multiferroic compound, CuO, has a quasidegenerate magnetic ground state that makes it prone to manipulation by the so called ``order-by-disorder mechanism. First principle computations supplemented with Monte Carlo simulations and experiments show that isovalent doping allows to stabilize the multiferroic phase in non-ferroelectric regions of the pristine material phase-diagram with experiments reaching a 250% widening of the ferroelectric temperature window with 5% of Zn doping. Our results allow to validate the importance of a quasidegenerate ground state on promoting multiferroicity on CuO at high temperatures and open a path to the material engineering of new multiferroic materials.
قيم البحث
اقرأ أيضاً
Combining experiments with first principles calculations, we show that site-specific doping of Mn into SrTiO3 has a decisive influence on the dielectric properties of these doped systems. We find that phonon contributions to the dielectric constant i
nvariably decrease sharply on doping at any site. However, a sizable, random dipolar contribution only for Mn at the Sr site arises from a strong off-centric displacement of Mn in spite of Mn being in a non-d0 state; this leads to a large dielectric constant at higher temperatures and gives rise to a relaxor ferroelectric behavior at lower temperatures. We also investigate magnetic properties in detail and critically reevaluate the possibility of a true multi-glass state in such systems.
We examine the Si(111) multi-valley quantum Hall system and show that it exhibits an exceptionally rich interplay of broken symmetries and quantum Hall ordering already near integer fillings $ u$ in the range $ u=0-6$. This six-valley system has a la
rge $[SU(2)]^3rtimes D_3$ symmetry in the limit where the magnetic length is much larger than the lattice constant. We find that the discrete ${D}_3$ factor breaks over a broad range of fillings at a finite temperature transition to a discrete nematic phase. As $T rightarrow 0$ the $[SU(2)]^3$ continuous symmetry also breaks: completely near $ u =3$, to a residual $[U(1)]^2times SU(2)$ near $ u=2$ and $4$ and to a residual $U(1)times [SU(2)]^2$ near $ u=1$ and $5$. Interestingly, the symmetry breaking near $ u=2,4$ and $ u=3$ involves a combination of selection by thermal fluctuations known as order by disorder and a selection by the energetics of Skyrme lattices induced by moving away from the commensurate fillings, a mechanism we term order by doping. We also exhibit modestly simpler analogs in the four-valley Si(110) system.
Simultaneous co-existence of room-temperature(T) ferromagnetism and ferroelectricity in Fe doped BaTiO$_3$ (BTO) is intriguing, as such Fe doping into tetragonal BTO, a room-T ferroelectric (FE), results in the stabilization of its hexagonal polymorp
h which is FE only below $sim$80K. Here, we investigate its origin and show that Fe-doped BTO has a mixed-phase room-temperature multiferroicity, where the ferromagnetism comes from the majority hexagonal phase and a minority tetragonal phase gives rise to the observed weak ferroelectricity. In order to achieve majority tetragonal phase (responsible for room-T ferroelectricity) in Fe-doped BTO, we investigate the role of different parameters which primarily control the PE hexagonal phase stability over the FE tetragonal one and identify three major factors namely, the effect of ionic size, Jahn-Teller (J-T) distortions and oxygen vacancies (OVs), to be primarily responsible. The effect of ionic size which can be qualitatively represented using the Goldschmidts tolerance (GT) factor seems to be the major dictating factor for the hexagonal phase stability. The understanding of these factors not only enables us to control them but also, achieve suitable co-doped BTO compound with enhanced room-T multiferroic properties.
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy
(ARPES) we find that a reversible metal to insulator transition and a fine tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.
We investigate the Ti-doping effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy (STM) measurements and first-principle calculations. Although the Ti-doping induced phase evolution seems regular with increasi
ng of the doping concentration (x), an unexpected chiral CDW phase is observed in the sample with x = 0.08, in which Ti atoms almost fully occupy the central Ta atoms in the CDW clusters. The emergence of the chiral CDW is proposed to be from the doping-enhanced orbital order. Only when x = 0.08, the possible long-range orbital order can trigger the chiral CDW phase. Compared with other 3d-elements doped 1T-TaS2, the Ti-doping retains the electronic flat band and the corresponding CDW phase, which is a prerequisite for the emergence of chirality. We expect that introducing elements with a strong orbital character may induce a chiral charge order in a broad class of CDW systems. The present results open up another avenue for further exploring the chiral CDW materials.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
