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We use the dynamical mean-field approximation to study singularities in the self-energy and a two-particle irreducible vertex induced by the metal-insulator transition of the disordered Falicov-Kimball model. We set general conditions for the existence of a critical metal-insulator transition caused by a divergence of the imaginary part of the self-energy. We calculate explicitly the critical behavior of the self-energy for the symmetric and asymmetric disorder distributions. We demonstrate that the metal-insulator transition is preceded by a pole in a two-particle irreducible vertex. We show that unlike the singularity in the self-energy the divergence in the irreducible vertex does not lead to non-analyticities in measurable physical quantities. We reveal universal features of the critical metal-insulator transition that are transferable also to the Mott-Hubbard transition in the models of the local Fermi liquid.
Mean-field theory of non-interacting disordered electron systems is widely and successfully used to describe equilibrium properties of alloys in the whole range of disorder strengths. It, however, fails to take into account effects of quantum coheren
We present experimental data and a theoretical interpretation on the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b approximately 2-10 nm. A large phase relaxation rate caused by scattering of quasiparti
We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of the Kohn-S
We study energy transport in XXZ spin chains driven to nonequilibrium configurations by thermal reservoirs of different temperatures at the boundaries. We discuss the transition between diffusive and subdiffusive transport regimes in sectors of zero
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies, a DOS meas