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We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $tau_{phi}$ as well as the inter- and intra-valley scattering times $tau_i$ and $tau_*$. While $tau_{phi}$ is in qualitative agreement with an electron-electron interaction mediated dephasing mechanism, electron spin-flip scattering processes are limiting $tau_{phi}$ at low temperatures. The analysis of $tau_i$ and $tau_*$ points to local strain fluctuation as the most probable mechanism for limiting the mobility in high-quality bilayer graphene.
We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples at carrie
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperatu
Bilayer MoS2 is a centrosymmetric semiconductor with degenerate spin states in the six valleys at the corners of the Brillouin zone. It has been proposed that breaking of this inversion symmetry by an out-of-plane electric field breaks this degenerac
Understanding the normal-metal state transport in twisted bilayer graphene near magic angle is of fundamental importance as it provides insights into the mechanisms responsible for the observed strongly correlated insulating and superconducting phase
Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a w