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We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples at carrier densities $|n|geq2.4times 10^{13}$ cm$^{-2}$. We observe a sudden increase of resistance and the onset of a second family of Shubnikov de Haas (SdH) oscillations as these high energy subbands are populated. From simultaneous Hall and magnetoresistance measurements together with SdH oscillations in the multiband conduction regime, we deduce the carrier densities and mobilities for the higher energy bands separately and find the mobilities to be at least a factor of two higher than those in the low energy bands.
The low-frequency magneto-optical properties of bilayer Bernal graphene are studied by the tight-binding model with four most important interlayer interactions taken into account. Since the main features of the wave functions are well depicted, the L
Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns ha
We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance strongly de
The flat bands in bilayer graphene(BLG) are sensitive to electric fields Ebot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron physics[1-5
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperatu