ترغب بنشر مسار تعليمي؟ اضغط هنا

Exporting superconductivity across the gap: Proximity effect for semiconductor valence-band states due to contact with a simple-metal superconductor

296   0   0.0 ( 0 )
 نشر من قبل Ulrich Zuelicke
 تاريخ النشر 2014
  مجال البحث فيزياء
والبحث باللغة English
 تأليف A. G. Moghaddam




اسأل ChatGPT حول البحث

The proximity effect refers to the phenomenon whereby superconducting properties are induced in a normal conductor that is in contact with an intrinsically superconducting material. In particular, the combination of nano-structured semiconductors with bulk superconductors is of interest because these systems can host unconventional electronic excitations such as Majorana fermions when the semiconductors charge carriers are subject to a large spin-orbit coupling. The latter requirement generally favors the use of hole-doped semiconductors. On the other hand, basic symmetry considerations imply that states from typical simple-metal superconductors will predominantly couple to a semiconductors conduction-band states and, therefore, in the first instance generate a proximity effect for band electrons rather than holes. In this article, we show how the superconducting correlations in the conduction band are transferred also to hole states in the valence band by virtue of inter-band coupling. A general theory of the superconducting proximity effect for bulk and low-dimensional hole systems is presented. The interplay of inter-band coupling and quantum confinement is found to result in unusual wave-vector dependencies of the induced superconducting gap parameters. One particularly appealing consequence is the density tunability of the proximity effect in hole quantum wells and nanowires, which creates new possibilities for manipulating the transition to nontrivial topological phases in these systems.

قيم البحث

اقرأ أيضاً

We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992)] and most recently by Hohensee et al. [Nature Commun. 6, 6578 (2015)].
A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-ind uced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphenes electronic structure and opens a new direction in graphene electronics research.
214 - G. Tkachov 2016
Non-centrosymmetric superconductors exhibit the magnetoelectric effect which manifests itself in the appearance of the magnetic spin polarization in response to a dissipationless electric current (supercurrent). While much attention has been dedicate d to the thermodynamic version of this phenomenon (Edelstein effect), non-equilibrium transport magnetoelectric effects have not been explored yet. We propose the magnetoelectric Andreev effect (MAE) which consists in the generation of spin-polarized triplet Andreev conductance by an electric supercurrent. The MAE stems from the spin polarization of the Cooper-pair condensate due to a supercurrent-induced non-unitary triplet pairing. We propose the realization of such non-unitary pairing and MAE in superconducting proximity structures based on two-dimensional helical metals -- strongly spin-orbit-coupled electronic systems with the Dirac spectrum such as the topological surface states. Our results uncover an unexplored route towards electrically controlled superconducting spintronics and are a smoking gun for induced unconventional superconductivity in spin-orbit-coupled materials.
We report on Andreev reflections at clean NbSe2-bilayer graphene junctions. The high transparency of the junction, which manifests as a large conductance enhancement of up to 1.8, enables us to see clear evidence of a proximity-induced superconductin g gap in bilayer graphene and two Andreev reflections through a vertical NbSe2-graphene and a lateral graphene-graphene junction respectively. Quantum transport simulations capture the complexity of the experimental data and illuminate the impact of various microscopic parameters on the transmission of the junction. Our work establishes the practice and understanding of an all-van-der-Waals, high-performance superconducting junction. The realization of a highly transparent proximized graphene-graphene junction opens up possibilities to engineer emergent quantum phenomena.
We have tuned in situ the proximity effect in a single graphene layer coupled to two Pt/Ta superconducting electrodes. An annealing current through the device changed the transmission coefficient of the electrode/graphene interface, increasing the pr obability of multiple Andreev reflections. Repeated annealing steps improved the contact sufficiently for a Josephson current to be induced in graphene.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا