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We report high luminance organic light-emitting diodes by use of acid functionalized multi-walled carbon nanotube (o-MWCNTs) as efficient hole injector electrodes with a simple and solution processable device structure. At only 10 V, the luminance can reach nearly 50,000 cd/m2 with an external quantum efficiency over 2% and a current efficiency greater than 21 cd/A. The investigation of hole-only devices shows that the mechanism for hole injection is changed from injection limited to bulk limited because of the higher effective work function of the anode modified by the o-MWCNTs. We expect the enhancement of the local electric field brought about by both the dielectric inhomogeneities within the o-MWCNT containing anode and the high aspect ratio carbon nanotubes, improves hole injection from the anode to organic active layer at much lower applied voltage.
The application of solution-processable graphene oxide (GO) as hole injection layer in organic light-emitting diodes (OLEDs) is demonstrated. High luminance of over 53,000 cd m-2 is obtained at only 10 V. The results will unlock a route of applying G
Concentration quenching is a major impediment to efficient organic light-emitting devices. We herein report on Organic Light-Emitting Diodes (OLEDs) based on a fluorescent amorphous red-emitting starbust triarylamine molecule (4-di(4-tert-butylbiphen
The magnetoelectroluminescence of conjugated organic polymer films is widely accepted to arise from a polaron pair mechanism, but their magnetoconductance is less well understood. Here we derive a new relationship between the experimentally measurabl
We study the photoabsorption properties of photoactive bulk polymer/ fullerene/nanotube heterojunctions in the near-infrared region. By combining pump-probe spectroscopy and linear response time-dependent density functional theory within the random p
The performance of solution-processed organic light emitting diodes (OLEDs) is often limited by non-uniform contacts. In this work, we introduce Ni-containing solution-processed metal oxide (MO) interfacial layers inserted between indium tin oxide (I