ﻻ يوجد ملخص باللغة العربية
We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge carrier density disparities, enabling the investigation of transport properties either in the unipolar (nn) or the bipolar (np) regime. In the latter pronounced single- and multibarrier Fabry-Perot (FP) resonances occur. We present measurements of different devices with different numbers of top gate stripes and spacings. The data are highly consistent with a phase coherent ballistic tight binding calculation and quantum capacitance model, whereas a superlattice effect and modification of band structure can be excluded.
We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas
We show analytically that the ability of Dirac materials to localize an electron in both a barrier and a well can be utilized to open a pseudo-gap in graphenes spectrum. By using narrow top-gates as guiding potentials, we demonstrate that graphene bi
We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field
We have measured magnetoresistance of hexagonal lateral superlattices. We observe three types of oscillations engendered by periodic potential modulation having hexagonal-lattice symmetry: amplitude modulation of the Shubnikov-de Haas oscillations, c
Hybrid lateral superlattices composed of a square array of antidots and a periodic one-dimensional magnetic modulation are prepared in $mathrm{Ga[Al]As}$ heterostructures. The two-dimensional electron gases exposed to these superlattices are characte