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Hybrid lateral superlattices composed of a square array of antidots and a periodic one-dimensional magnetic modulation are prepared in $mathrm{Ga[Al]As}$ heterostructures. The two-dimensional electron gases exposed to these superlattices are characterized by magnetotransport experiments in vanishing average perpendicular magnetic fields. Despite the absence of closed orbits, the diagonal magnetoresistivity in the direction perpendicular to the magnetic modulation shows pronounced classical resonances. They are located at magnetic fields where snake trajectories exist which are quasi-commensurate with the antidot lattice. The diagonal magnetoresistivity in the direction of the magnetic modulation increases sharply above a threshold magnetic field and shows no fine structure. The experimental results are interpreted with the help of numerical simulations based on the semiclassical Kubo model.
We have observed commensurability oscillations (CO) in the Hall resistance $R_{yx}$ of a unidirectional lateral superlattice (ULSL). The CO, having small amplitudes ($sim$ 1 $Omega$) and being superposed on a roughly three-orders of magnitude larger
We report the experimental observation of commensurability oscillations (COs) in 1D graphene superlattices. The widely tunable periodic potential modulation in hBN encapsulated graphene is generated via the interplay of nanopatterned few layer graphe
We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas
We have measured magnetoresistance of hexagonal lateral superlattices. We observe three types of oscillations engendered by periodic potential modulation having hexagonal-lattice symmetry: amplitude modulation of the Shubnikov-de Haas oscillations, c
A poly(styrene-block-methylmethacrylate) diblock copolymer in the hexagonal cylindrical phase has been used as a mask for preparing a periodic gate on top of a Ga[Al]As-heterostructure. A superlattice period of 43 nm could be imposed onto the two-dim