اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSpin relaxation in inhomogeneous quantum dot arrays studied by electron spin resonance
131
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to increase the spin relaxation time in the system. Created structures allow us to change an effective localization radius of electrons by external magnetic field. With the localization radius close to the size of a quantum dot group, we obtain fourfold increasing spin relaxation time $T_1$, as compared to conventional homogeneous quantum dot arrays. This effect is attributed to averaging of local magnetic fields related to nuclear spins $^{29}$Si and stabilization of $S_z$-polarization during electron back-and-forth motion within a quantum dot group.
قيم البحث
اقرأ أيضاً
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglemen
t operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of the electron spin resonance is possible.
The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit cou
pling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC. Here we report an experimental realization of electrically driven electron-spin resonance in a silicon-on-insulator (SOI) nanowire quantum dot device. The underlying driving mechanism results from an interplay between SOC and the multi-valley structure of the silicon conduction band, which is enhanced in the investigated nanowire geometry. We present a simple model capturing the essential physics and use tight-binding simulations for a more quantitative analysis. We discuss the relevance of our findings to the development of compact and scalable electron-spin qubits in silicon.
We introduce an adiabatic transfer protocol for spin states in large quantum dot arrays that is based on time-dependent modulation of the Heisenberg exchange interaction in the presence of a magnetic field gradient. We refer to this protocol as spin-
CTAP (coherent transport by adiabatic passage) in analogy to a related protocol developed for charge state transfer in quantum dot arrays. The insensitivity of this adiabatic protocol to pulse imperfections has potential advantages for reading out extended spin qubit arrays. When the static exchange interaction varies across the array, a quantum-controlled version of spin-CTAP is possible, where the transfer process is conditional on the spin states in the middle of the array. This conditional operation can be used to generate N-qubit entangled GHZ states. Using a realistic noise model, we analyze the robustness of the spin-CTAP operations and find that high-fidelity (>95%) spin eigenstate transfer and GHZ state preparation is feasible in current devices.
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied
in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin life-time with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the Dyakonov-Perel spin relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective transport, with
four contacts per dot for realizing a non-local spin-valve circuit. This provides an interesting system for studies of spintronic effects since the contacts to reservoirs can be controlled and characterized with high accuracy. We show how this can be used to extract in a single measurement the relaxation time for electron spins inside the dot ~ 300 ps and the degree of spin polarization of the contacts P ~ 0.8.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
