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تسجيل مستخدم جديدMn$^{2+}$/Mn$^{3+}$ state of La$_{0.7}$Ce$_{0.3}$MnO$_3$ by oxygen reduction and photodoping
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Films of cerium-doped LaMnO$_3$, which has been intensively discussed as an electron-doped counterpart to hole-doped mixed-valence lanthanum manganites during the past decade, were analyzed by x-ray photoemission spectroscopy with respect to their manganese valence under photoexcitation. The comparative analysis of the Mn 3s exchange splitting of La$_{0.7}$Ce$_{0.3}$MnO$_3$ (LCeMO) films in the dark and under illumination clearly shows that both oxygen reduction and illumination are able to decrease the Mn valence towards a mixed 2$+$/3$+$ state, independently of the film thickness and the degree of CeO$_2$ segregation. Charge injection from the photoconductive SrTiO$_3$ substrate into the Mn e$_g$ band with carrier lifetimes in the range of tens of seconds and intrinsic generation of electron-hole pairs within the films are discussed as two possible sources of the Mn valence shift and the subsequent electron doping.
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Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$ p
hase segregation, and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, are compared with respect to their resistance-vs.-temperature (R vs. T) behavior from 300~K down to 90~K. While the variation of the film thickness (and thus the degree of epitaxial strain) in the range between 10~nm and 100~nm has only a weak impact on the electrical transport, the degree of oxygen deficiency as well as the existence of CeO$_2$ clusters can completely change the type of hopping mechanism. This is shown by fitting the respective textit{R-T} curves with three different transport models (adiabatic polaron hopping, Mott variable-range hopping, Efros-Shklovskii variable-range hopping), which are commonly used for the mixed-valence manganites. Several characteristic transport parameters, such as the hopping energies, the carrier localization lengths, as well as the Mn valences are derived from the fitting procedures.
La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$-phase segregation and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, were comparatively investigated with respect to both their spectral and tempera
ture-dependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optical excitation, oxygen reduction appeared to be an effective way to decrease the film resistance, but the film thickness was found to play a minor role. However, from the evaluation of the spectral behaviour of the PC and the comparison of the MR of the LCeMO/substrate-samples with a bare substrate under illumination we find that the photoconductivity data reflects not only contributions from (i) photogenerated charge carriers in the film and (ii) carriers injected from the photoconductive substrate (as concluded from earlier works), but also (iii) a decisive parallel photoconduction in the SrTiO$_3$ substrate. Furthermore -- also by analyzing the MR characteristics -- the unexpected occurence of a strong electroresistive effect in the sample with the highest degree of CeO$_2$ segregation and oxygen deficiency could be attributed to the electroresistance of the SrTiO$_3$ substrate as well. The results suggest a critical reconsideration and possibly a reinterpretation of several previous photoconductivity and electroresistance investigations of manganite thin films on SrTiO$_3$.
Superlattices composed of ferromagnetics, namely La$_{0.7}$Ca$_{0.3}$MnO$_3$ (LCMO), and ferroelectrics, namely, BaTiO$_3$(BTO) were grown on SrTiO$_3$ at 720$^o$C by pulsed laser deposition process. While the out-of-plane lattice parameters of the s
uperlattices, as extracted from the X-ray diffraction studies, were found to be dependent on the BTO layer thickness, the in-plane lattice parameter is almost constant. The evolution of the strains, their nature, and their distribution in the samples, were examined by the conventional sin$^2psi $ method. The effects of structural variation on the physical properties, as well as the possible role of the strain on inducing the multiferroism in the superlattices, have also been discussed.
The magnetic dead layers in films a few nanometers thick are investigated for La$_{0.7}$Sr$_{0.3}$MnO$_3$ on (001)-oriented SrTiO$_3$ (STO), LaAlO$_3$ (LAO) and (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrates. An anomalous moment found
to persist above the Curie temperature of the La$_{0.7}$Sr$_{0.3}$MnO$_3$ films is not attributed to the films, but to oxygen vacancies at or near the surface of the substrate. The contribution to the moment from the substrate is as high as 20 $mu$B/nm$^2$ in the case of STO or LSAT. The effect is increased by adding an STO cap layer. Taking this d-zero magnetism into account, extrapolated magnetic dead layer thicknesses of 0.8 nm, 1.5 nm and 3.0 nm are found for the manganite films grown on LSAT, STO and LAO substrates, respectively. An STO cap layer eliminates the LSMO dead layer.
We report on first principles calculations of the electronic structure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$/SrTiO$_{3}$ junction with two possible types of interface terminations. We find that the La$_{0.7}$Sr$_{0.3}$O/TiO$_{2}$ interface preserves the i
nterlayer ferromagnetic coupling between the interface MnO$_{2}$ layer and the bulk. The other interface, MnO$_{2}$/SrO, favours antiferromagnetic coupling with the bulk. By inserting two unit cells of undoped LaMnO$_{3}$ at the interface the ferromagnetism is recovered. This is understood in terms of the doping level and the mobility of carriers near the interface.
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