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During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier-mediated itinerant ferromagnetism. Phase-pure, crystallographically excellent ZnO:Co is uniformly paramagnetic. Superparamagnetism arises when phase separation or defect formation occurs, due to nanometer-sized metallic precipitates. Other compounds like ZnO:(Li,Ni) and ZnO:Cu do not exhibit indication of ferromagnetism. Second, its small spin-orbit coupling and correspondingly large spin coherence length makes ZnO suitable for transporting or manipulating spins in spintronic devices. From optical pump/optical probe experiments, we find a spin dephasing time of the order of 15 ns at low temperatures which we attribute to electrons bound to Al donors. In all-electrical magnetotransport measurements, we successfully create and detect a spin-polarized ensemble of electrons and transport this spin information across several nanometers. We derive a spin lifetime of 2.6 ns for these itinerant spins at low temperatures, corresponding well to results from an electrical pump/optical probe experiment.
The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we
Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide information
We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO), and platin
Spin transport in electric conductors is largely determined by two material parameters - spin diffusion length and spin Hall angle. In metals, these are typically determined indirectly by probing magnetoresistance in magnet/metal heterostructures, as
We report the observation of longitudinal spin Seebeck effects (LSSE) in an all-oxide bilayer system comprising an IrO$_2$ film and an Y$_3$Fe$_5$O$_{12}$ film. Spin currents generated by a temperature gradient across the IrO$_2$/Y$_3$Fe$_5$O$_{12}$