اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدNanomechanical resonant structures in single-crystal diamond
263
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
With its host of outstanding material properties, single-crystal diamond is an attractive material for nanomechanical systems. Here, the mechanical resonance characteristics of freestanding, single-crystal diamond nanobeams fabricated by an angled-etching methodology are reported. Resonance frequencies displayed evidence of significant compressive stress in doubly clamped diamond nanobeams, while cantilever resonance modes followed the expected inverse-length-squared trend. Q-factors on the order of 104 were recorded in high vacuum. Results presented here represent initial groundwork for future diamond-based nanomechanical systems which may be applied in both classical and quantum applications.
قيم البحث
اقرأ أيضاً
We present nanofabrication and mechanical measurements of single-crystal diamond cantilevers with thickness down to 85 nm, thickness uniformity better than 20 nm, and lateral dimensions up to 240 um. Quality factors exceeding one million are found at
room temperature, surpassing those of state-of-the-art single-crystal silicon cantilevers of similar dimensions by roughly an order of magnitude. Force sensitivities of a few hundred zeptonewtons result for the best cantilevers at millikelvin temperatures. Single-crystal diamond could thus directly improve existing force and mass sensors by a simple substitution of resonator material, and lead to quantum nanomechanical devices with exceptionally low energy dissipation.
The energy dissipation 1/Q (where Q is the quality factor) and resonance frequency characteristics of single-crystal 3C-SiC ultrahigh frequency (UHF) nanomechanical resonators are measured, for a family of UHF resonators with resonance frequencies of
295MHz, 395MHz, 411MHz, 420MHz, 428MHz, and 482MHz. A temperature dependence of dissipation, 1/Q ~ T^(0.3) has been identified in these 3C-SiC devices. Possible mechanisms that contribute to dissipation in typical doubly-clamped beam UHF resonators are analyzed. Device size and dimensional effects on the dissipation are also examined. Clamping losses are found to be particularly important in these UHF resonators. The resonance frequency decreases as the temperature is increased, and the average frequency temperature coefficient is about -45ppm/K.
With the best overall electronic and thermal properties, single-crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into us
eful semiconductors faces doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion-implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional boron doping in natural SCD without any phase transitions or lattice damage which can be readily realized with thermal diffusion at relatively low temperature. For the boron doping, we employ a unique dopant carrying medium: heavily doped Si nanomembranes. We further demonstrate selectively doped high-voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high-voltage power conversion systems and for other novel diamond-based electronics.
We have developed capacitively-transduced nanomechanical resonators using sp$^2$-rich diamond-like carbon (DLC) thin films as conducting membranes. The electrically conducting DLC films were grown by physical vapor deposition at a temperature of $500
{,,}^circ$C. Characterizing the resonant response, we find a larger than expected frequency tuning that we attribute to the membrane being buckled upwards, away from the bottom electrode. The possibility of using buckled resonators to increase frequency tuning can be of advantage in rf applications such as tunable GHz filters and voltage-controlled oscillators.
The negatively-charged nitrogen-vacancy center (NV) in diamond forms a versatile system for quantum sensing applications. Combining the advantageous properties of this atomic-sized defect with scanning probe techniques such as atomic force microscopy
(AFM) enables nanoscale imaging of e.g. magnetic fields. To form a scanning probe device, we place single NVs shallowly (i.e. < 20 nm) below the top facet of a diamond nanopillar, which is located on a thin diamond platform of typically below 1 mu m thickness. This device can be attached to an AFM head, forming an excellent scanning probe tip. Furthermore, it simultaneously influences the collectible photoluminescence (PL) rate of the NV located inside. Especially sensing protocols using continuous optically-detected magnetic resonance (ODMR) benefit from an enhanced collectible PL rate, improving the achievable sensitivity. This work presents a comprehensive set of simulations to quantify the influence of the device geometry on the collectible PL rate for individual NVs. Besides geometric parameters (e.g. pillar length, diameter and platform thickness), we also focus on fabrication uncertainties such as the exact position of the NV or the taper geometry of the pillar introduced by imperfect etching. As a last step, we use these individual results to optimize our current device geometry, yielding a realistic gain in collectible PL rate by a factor of 13 compared to bulk diamond and 1.8 compared to our unoptimized devices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
