Spin-orbit qubit (SOQ) is the dressed spin by the orbital degree of freedom through a strong spin-orbit coupling. We show that Coulomb interaction between two electrons in quantum dots located separately in two nanowires can efficiently induce quantum entanglement between two SOQs. The physical mechanism to achieve such quantum entanglement is based on the feasibility of the SOQ responding to the external electric field via an intrinsic electric dipole spin resonance.
By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit interaction (SOI), we show that the interplay of different SOI mechanisms induces highly ani
sotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly-singular behavior, which leads to an intriguing novel phenomenon, beating of Friedel oscillations. This effect is a general feature of systems with BR+D SOI and should be observed in structures with a sufficiently strong SOI.
We map electron spin dynamics from time to space in quantum wires with spatially uniform and oscillating Rashba spin-orbit coupling. The presence of the spin-orbit interaction introduces pseudo-Zeeman couplings of the electron spins to effective magn
etic fields. We show that by periodically modulating the spin-orbit coupling along the quantum wire axis, it is possible to create the spatial analogue of spin resonance, without the need for any real magnetic fields. The mapping of time-dependent operations onto a spatial axis suggests a new mode for quantum information processing in which gate operations are encoded into the band structure of the material. We describe a realization of such materials within nanowires at the interface of LaAlO3/SrTiO3 heterostructures.
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and
bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.
We propose and analyse a scheme for performing a long-range entangling gate for qubits encoded in electron spins trapped in semiconductor quantum dots. Our coupling makes use of an electrostatic interaction between the state-dependent charge configur
ations of a singlet-triplet qubit and the edge modes of a quantum Hall droplet. We show that distant singlet-triplet qubits can be selectively coupled, with gate times that can be much shorter than qubit dephasing times and faster than decoherence due to coupling to the edge modes. Based on parameters from recent experiments, we argue that fidelities above 99% could in principle be achieved for a two-qubit entangling gate taking as little as 20 ns.
The existence of robust chiral edge states in a finite topologically nontrivial chern insulator is a consequence of the bulk-boundary correspondence. In this paper, we present a theoretical framework based on lattice Greens function to study the scat
tering of such chiral edge electrons by a single localized impurity. To this end, in the first step, we consider the standard topological Haldane model on a honeycomb lattice with strip geometry. We obtain analytical expressions for the wave functions and their corresponding energy dispersion of the low-energy chiral states localized at the edge of the ribbon. Then, we employ the $T$-matrix Lippmann-Schwinger approach to explicitly show the robustness of chiral edge states against the impurity scattering. This backscattering-free process has an interesting property that the transmitted wave function acquires an additional phase factor. Although this additional phase factor does not affect quantum transport through the chiral channel it can carry quantum information. As an example of such quantum information transport, we investigate the entanglement of two magnetic impurities in a chern insulator through the dissipation-less scattering of chiral electrons.