اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدScanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island
140
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers. Scanning gate microscopy and scanning gate spectroscopy are used to first localize and then study a single QHI near a quantum point contact. The presence of Coulomb diamonds in the spectroscopy con- firms that Coulomb blockade governs transport across the QHI. Varying the microscope tip bias as well as current bias across the device, we uncover the QHI discrete energy spectrum arising from electronic confinement and we extract estimates of the gradient of the confining potential and of the edge state velocity.
قيم البحث
اقرأ أيضاً
The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already reve
aled rich physics, like fractionally charged excitations, or chiral Luttinger liquid. Thanks to scanning gate microscopy, we show that a single QPC can turn into an interferometer for specific potential landscapes. Spectroscopy, magnetic field and temperature dependences of electron transport reveal a quantitatively consistent interferometric behavior of the studied QPC. To explain this unexpected behavior, we put forward a new model which relies on the presence of a quantum Hall island at the centre of the constriction as well as on different tunnelling paths surrounding the island, thereby creating a new type of interferometer. This work sets the ground for new device concepts based on coherent tunnelling.
We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of hotspots where the conductance i
s strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering between localized Landau levels.
Periodic driving fields can induce topological phase transitions, resulting in Floquet topological phases with intriguing properties such as very large Chern numbers and unusual edge states. Whether such Floquet topological phases could generate robu
st edge state conductance much larger than their static counterparts is an interesting question. In this paper, working under the Keldysh formalism, we study two-lead transport via the edge states of irradiated quantum Hall insulators using the method of recursive Floquet-Greens functions. Focusing on a harmonically-driven Hofstadter model, we show that quantized Hall conductance as large as $8e^2/h$ can be realized, but only after applying the so-called Floquet sum rule. To assess the robustness of edge state transport, we analyze the DC conductance, time-averaged current profile and local density of states. It is found that co-propagating chiral edge modes are more robust against disorder and defects as compared with the remarkable counter-propagating edge modes, as well as certain symmetry-restricted Floquet edge modes. Furthermore, we go beyond the wide-band limit, which is often assumed for the leads, to study how the conductance quantization (after applying the Floquet sum rule) of Floquet edge states can be affected if the leads have finite bandwidths. These results may be useful for the design of transport devices based on Floquet topological matter.
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present h
ow the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas.
We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measurin
g the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential landscape. We apply this technique to perform interferometry of the thermoelectric transport in a quantum point contact (QPC). We observe an interference pattern both in SGM and TSGM images, and evidence large differences between the two signals in the low density regime of the QPC. In particular, a large phase jump appears in the interference fringes recorded by TSGM, which is not visible in SGM. We discuss this difference of sensitivity using a microscopic model of the experiment, based on the contribution from a resonant level inside or close to the QPC. This work demonstrates that combining scanning gate microscopy with thermoelectric measurements offers new information as compared to SGM, and provides a direct access to the derivative of the device transmission with respect to energy, both in amplitude and in phase.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
