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تسجيل مستخدم جديدOptimisation of CMOS pixel sensors for high performance vertexing and tracking
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CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 micrometers process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to about 10 square meters may be equipped with pixel sensors.
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CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a small pixel
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