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We describe a catalyst-free vapor-solid synthesis of bismuth selenide (Bi2Se3) nanostructures at ambient pressure with hydrogen as a carrier gas. The nanostructures were synthesized on glass, silicon and mica substrates and the method yields a variety of nanostructures: nanowires, nanoribbons, nanoplatelets and nanoflakes. The materials analysis shows high chemical purity in all cases, without sacrificing the crystalline structure of Bi2Se3. Low-temperature measurements of the nanostructures indicate contributions from the surface states with a tunable carrier density. Samples synthesized on flexible mica substrates show no significant change in resistance upon bending, indicating robustness of as-grown Bi2Se3 nanostructures and their suitability for device applications.
We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow along the
We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that partic
Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional topologic
We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 micro
The synthesis of Si3N4 nanowires from the reaction of silicon nanoparticles with N2 in the 1200-1440 C temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon oxide in