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We report electrical conductance measurements of Bi nanocontacts created by repeated tip-surface indentation using a scanning tunneling microscope at temperatures of 4 K and 300 K. As a function of the elongation of the nanocontact we measure robust, tens of nanometers long plateaus of conductance G0 = 2e^2/h at room temperature. This observation can be accounted for by the mechanical exfoliation of a Bi(111) bilayer, a predicted QSH insulator, in the retracing process following a tip-surface contact. The formation of the bilayer is further supported by the additional observation of conductance steps below G0 before break-up at both temperatures. Our finding provides the first experimental evidence of the possibility of mechanical exfoliation of Bi bilayers, of the existence of the QSH phase in a two-dimensional crystal, and, most importantly, of the observation of the QSH phase at room temperature.
Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for $Sb_2Te_3$, $Sb_2Se_3$, $Bi_2Te_3$ and $Bi_2Se_3$ crys
The interface between a solid and vacuum can become electronically distinct from the bulk. This feature, encountered in the case of quantum Hall effect, has a manifestation in insulators with topologically protected metallic surface states. Non-trivi
Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a 2D monolayer together with the weak dielectric screening lead t
Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel magnetoresistance (
The graphene edge state has long been predicted to be a zero energy, one-dimensional electronic waveguide mode that dominates transport in neutral graphene nanostructures, with potential application to graphene devices. However, its exceptional prope