اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدAll-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces
151
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filtering efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Almost perfectly matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, indicating large interfacial spin-asymmetry, high spin-injection efficiency, and consequently high GMR ratio. Transport calculations further confirms the superiority of the all-Heusler architecture over the conventional Heusler/transition-metal(TM) structure by comparing their transmission coefficients and interfacial resistances of parallel conduction electrons, as well as the macroscopic current-voltage (I-V) characteristics. We suggest future theoretical and experimental efforts in developing novel all-Heusler GMR junctions for the read heads of the next generation high-density hard disk drives (HDDs).
قيم البحث
اقرأ أيضاً
The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are derived within
an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interference between Bychkov-Rashba and Dresselhaus spin-orbit couplings that appear at junction interfaces and in the tunneling region. We also investigate the transport properties of ferromagnet/semiconductor/ferromagnet tunnel junctions and show that in such structures the spin-orbit interaction leads not only to the TAMR effect but also to the anisotropy of the conventional tunneling magnetoresistance (TMR). The resulting anisotropic tunneling magnetoresistance (ATMR) depends on the absolute magnetization directions in the ferromagnets. Within the proposed model, depending on the magnetization directions in the ferromagnets, the interplay of Bychkov-Rashba and Dresselhaus spin-orbit couplings produces differences between the rates of transmitted and reflected spins at the ferromagnet/seminconductor interfaces, which results in an anisotropic local density of states at the Fermi surface and in the TAMR and ATMR effects. Model calculations for Fe/GaAs/Fe tunnel junctions are presented. Furthermore, based on rather general symmetry considerations, we deduce the form of the magnetoresistance dependence on the absolute orientations of the magnetizations in the ferromagnets.
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spi
n injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and target electrode material, spin injection efficiency can be significantly increased in epitaxial ferromagnetic insulator tunnel junctions. Our results demonstrate that not only structural but also Fermi-surface matching is important to suppress scattering processes in spintronic devices.
This contribution reports on comparative studies on giant magnetoresistance (GMR) in carbon nanotubes (CNTs) and graphene nanoribbons of similar aspect ratios (i.e perimeter/length and width/length ratios, for the former and the latter, respectively)
. The problem is solved at zero temperature in the ballistic transport regime, by means of the Greens functions technique within the tight-binding model and with the so-called wide band approximation for electrodes. The GMR effect in graphene is comparable to that of CNTs, it depends strongly on the chirality and only slightly on the aspect ratio. It turns out that graphene, analogously to CNTs may be quite an interesting material for spintronic applications.
We study the zero temperature conductance and magnetoconductance of ballistic textit{p-n} junctions in Weyl semimetals. Electron transport is mediated by Klein tunneling between textit{n}- and textit{p}- regions. The chiral anomaly that is realized i
n Weyl semimetals plays a crucial role in the magnetoconductance of the junction. With the exception of field orientations where the angle between $mathbf{B}$ and the junction plane is small, magnetoconductance is positive and linear in $B$ at both weak and strong magnetic fields. In contrast, magnetoconductance in conventional textit{p-n} junctions is always negative.
We report the magnetotransport properties of self-assembled Co@CoO nanoparticle arrays at temperatures below 100 K. Resistance shows thermally activated behavior that can be fitted by the general expression of R exp{(T/T0)^v}. Efros-Shklovskii variab
le range hopping (v=1/2) and simple activation (hard gap, v=1) dominate the high and low temperature region, respectively, with a strongly temperature-dependent transition regime in between. A giant positive magnetoresistance of >1,400% is observed at 10K, which decreases with increasing temperature. The positive MR and most of its features can be explained by the Zeeman splitting of the localized states that suppresses the spin dependent hopping paths in the presence of on-site Coulomb repulsion.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
