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We have developed the laser-diode-heated floating zone (LDFZ) method, in order to improve the broad and inhomogeneous light focusing in the conventional lamp-heated floating zone method, which often causes difficulties in the crystal growth especially for the incongruently melting materials. We have simulated the light focusing properties of the LDFZ method to make irradiated light homogeneous and restricted mostly to the molten zone. We have designed and assembled an LDFZ furnace, and have demonstrated how it works through actual crystal growth. The method is applicable to various kinds of materials, and enables stable and reproducible crystal growth even for the incongruently melting materials. We have succeeded in the crystal growth of representative incongruently melting materials such as BiFeO3 and (La,Ba)2CuO4, which are difficult to grow by the conventional method. Tolerance to the decentering of the sample and highly efficient heating are also established in the LDFZ method.
Single crystals of PrNiO3 were grown under an oxygen pressure of 295 bar using a unique high-pressure optical-image floating zone furnace. The crystals, with volume in excess of 1 mm3, were characterized structurally using single crystal and powder X
We report the growth of large single-crystals of Cu2MnAl, a ferromagnetic Heusler compound suitable for polarizing neutron monochromators, by means of optical floating zone under ultra-high vacuum compatible conditions. Unlike Bridgman or Czochralsky
Effects of the growth velocity on the crystal growth behavior of Bi_2Sr_2Ca_1Cu_2O_x (Bi-2212) have been studied by floating zone technique. The results show that a necessary condition for obtaining large single crystals along the c-axis is that the
Single crystals of the metallic Ruddlesden-Popper trilayer nickelates R$_4$Ni$_3$O$_{10}$ (R=La, Pr) were successfully grown using an optical-image floating zone furnace under oxygen pressure (pO$_2$) of 20 bar for La$_4$Ni$_3$O$_{10}$ and 140 bar fo
Recently a new type diluted magnetic semiconductor (BaK)(ZnMn)2As2 (BZA) with high Cure temperature (Tc) was discovered showing independent spin and charge doping mechanism. This makes BZA a promising material for spintronics devices. Here we report