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We study the detailed temperature and composition dependence of the resistivity, $rho(T)$, and thermopower, $S(T)$, for a series of layered bismuth chalcogenides Bi$_2$Te$_{3-x}$Se$_x$, and report the stoichiometry dependence of the optical band gap. In the resistivity of the most compensated member, Bi$_2$Te$_{2.1}$Se$_{0.9}$, we find a low-temperature plateau whose onset temperature correlates with the high-temperature activation energy. For the whole series $S(T)$ can be described by a simple model for an extrinsic semiconductor. By substituting Se for Te, the Fermi level is tuned from the valence band into the conduction band. The maximum values of $S(T)$, bulk band gap as well the activation energy in the resistivity are found for $x approx 0.9$.
The results of magnetic susceptibility, electrical resistivity ($rho$), heat-capacity (C) and thermopower (S) measurements on CeCuAs2, forming in ZrCuSi2-type tetragonal structure, are reported. Our investigations reveal that Ce is trivalent and ther
Compacted pellets of nanocrystalline nickel (NC-Ni) of average particle size ranging from 18 to 33 nm were prepared using a variety of surfactants. They were characterized well and were studied on the influence of the surfactants on the electrical re
We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our study rev
As a canonical response to the applied magnetic field, the electronic states of a metal are fundamentally reorganized into Landau levels. In Dirac metals, Landau levels can be expected without magnetic fields, provided that an inhomogeneous strain is
Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield