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We report measurements of the optical response of polycrystalline DyN thin films. The frequency-dependent complex refractive index in the near IR-visible-near UV was determined by fitting reflection/transmission spectra. In conjunction with resistivity measurements these identify DyN as a semiconductor with 1.2 eV optical gap. When doped by nitrogen vacancies it shows free carrier absorption and a blue-shifted gap associated with the Moss-Burstein effect. The refractive index of 2.0+/-0.1 depends only weakly on energy. Far infrared reflectivity data show a polar phonon of frequency 280 cm-1 and dielectric strength delta epsilon= 20.
The Raman effect -- inelastic scattering of light by lattice vibrations (phonons) -- produces an optical response closely tied to a materials crystal structure. Here we show that resonant optical excitation of IR and Raman phonons gives rise to a Ram
The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors and transparent electrodes. The band s
A Kubo-Greenwood-like equation for the Gilbert damping parameter $alpha$ is presented that is based on the linear response formalism. Its implementation using the fully relativistic Korringa-Kohn-Rostoker (KKR) band structure method in combination wi
Using first-principles density functional calculations, electronic and optical properties of ferromagnetic semiconductor EuO are investigated. In particular, we have developed a way to obtain the spin-dependent optical response of the magnetic materi
Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, quantum anomalous Hall (QAH) effect and axion insulator state are observed in odd and even layers