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We have developed a model describing the non-proportional response in scintillators based on non-thermalised carrier and phonon transport. We show that the thermalization of e-h distributions produced in scintillators immediately after photon absorption may take longer than the period over which the non-proportional signal forms. The carrier and LO-phonon distributions during this period remain non-degenerate at quasi-equilibrium temperatures far exceeding room temperature. We solve balance equations describing the energy exchange in a hot bipolar plasma of electrons/holes and phonons. Taking into account dynamic screening we calculate the ambipolar diffusion coefficient at all temperatures. The non-proportional light yields calculated for NaI are shown to be consistent with experimental data. We discuss the implications of a non-equilibrium model, comparing its predictions with a model based on the transport of thermalised carriers. Finally, evidence for non-equilibrium effects is suggested by the shape of non-proportionality curve and wide dispersion in data observed in K-dip spectroscopy near the threshold. A comparison of the predicted curves shows good agreement for deformation potential value in the range 7-8 eV.
We measure and explain scintillator non-proportionality and gamma quenching of CaWO4 at low energies and low temperatures. Phonons that are created following an interaction in the scintillating crystal at temperatures of 15mK are used for a calorimet
Ultrafast dynamics of graphite is investigated by time-resolved photoemission spectroscopy. We observe spectral features of direct photoexcitations, non-thermal electron distributions, and recovery dynamics occurring with two time scales having disti
First-principles calculations combining density functional theory and many-body perturbation theory can provide microscopic insight into the dynamics of electrons and phonons in materials. We review this theoretical and computational framework, focus
Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excit
Hot electron transport of direct and scattered carriers across an epitaxial NiSi_2/n-Si(111) interface, for different NiSi_2 thickness, is studied using Ballistic Electron Emission Microscopy (BEEM). We find the BEEM transmission for the scattered ho