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تسجيل مستخدم جديدOxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film
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The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon application of a downward electric field above 80 oC. The origin of the NDR behavior is shown to be related to the ionic defect of oxygen vacancies (VO..) present in the film. On the basis of analyzing the leakage mechanism and surface potential behavior, the NDR behavior can be understood by considering the competition between the polarized distribution and neutralization of VO...
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Oxygen-vacancies-related dielectric relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 (BLFM) thin film have been investigated by temperature-dependent impedance spectroscopy from 40 oC up to 200 oC. We found that hopping electrons and sing
le-charged oxygen vacancies (VO.) coexist in the BLFM thin film and make contribution to dielectric response of grain and grain boundary respectively. The activation energy for VO. is shown to be 0.94 eV in the whole temperature range investigated, whereas the distinct activation energies for electrons are 0.136 eV below 110oC and 0.239 eV above 110oC in association with hopping along the Fe2+- VO.-Fe3+ chain and hopping between Fe2+-Fe3+, respectively, indicating different hopping processes for electrons. Moreover, it has been found that hopping electrons is in form of long rang movement, while localized and long range movement of oxygen vacancies coexist in BLFM film. The Cole-Cole plots in modulus formalism show a poly-dispersive nature of relaxation for oxygen vacancies and a unique relaxation time for hopping electrons. The scaling behavior of modulus spectra further suggests that the distribution of relaxation times for oxygen vacancies is temperature independent.
We have studied the polarization fatigue of La and Mg co-substituted BiFeO3 thin film, where a polarization peak is observed during the fatigue process. The origin of such anomalous behavior is analyzed on the basis of the defect evolution using temp
erature-dependent impedance spectroscopy. It shows that the motion of oxygen vacancies (VO..) is associated with a lower energy barrier, accompanied by the injection of electrons into the film during the fatigue process. A qualitative model is proposed to explain the fatigue behavior, which involves the modification of the Schottky barrier upon the accumulation of VO.. at the metal-dielectric interface.
The influence of La and Nd co-substitution on the structural and magnetic properties of BiFeO3 (BFO) thin films was examined. Epitaxial thin films of pure and, La and Nd co-doped BFO on the SrRuO3 buffered single crystal SrTiO3 (001) substrate were d
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