اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدXPS evidence for molecular charge-transfer doping of graphene
158
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
By employing x-ray photoelectron spectroscopy (XPS), we have been able to establish the occurrence of charge-transfer doping in few-layer graphene covered with electron acceptor (TCNE) and donor (TTF) molecules. We have performed quantitative estimates of the extent of charge transfer in these complexes and elucidated the origin of unusual shifts of their Raman G bands and explained the differences in the dependence of conductivity on n- and p-doping. The study unravels the cause of the apparent difference between the charge-transfer doping and electrochemical doping.
قيم البحث
اقرأ أيضاً
We introduce a modified version of the Hirshfeld charge analysis method and demonstrate its accurateness by calculating the charge transfer between the paramagnetic molecule NO2 and graphene. The charge transfer between paramagnetic molecules and a g
raphene layer as calculated with ab initio methods can crucially depend on the size of the supercell used in the calculation. This has important consequences for adsorption studies involving paramagnetic molecules such as NO2 physisorbed on graphene or on carbon nanotubes.
It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge transfer doping a
cross the interfaces. Here we use Raman and photoluminescence (PL) spectroscopy to study the interface between monolayer graphene/MoS2 heterostructures prepared by mechanical exfoliation and layer-by-layer transfer. By using correlation analysis between the Raman modes of graphene and MoS2 we show that both layers are subjected to compressive strain and charge transfer doping following mechanical exfoliation and thermal annealing. Furthermore, we show that both strain and carrier concentration can be modulated in the heterostructures with additional thermal annealing. Our study highlights the importance of considering both mechanical and electronic coupling when characterizing the interface in van der Waals heterostructures, and demonstrates a method to tune their electromechanical properties.
The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluen
e is seen to act as a donor, transferring electrons to the graphene. However, the degree of doping is seen to depend on the magnitude and polarity of an electric field applied between the graphene and a nearby electrode. This can be understood in terms of an electrochemical reaction mediated by the graphene crystal.
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy
(ARPES) we find that a reversible metal to insulator transition and a fine tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.
We report a study of electronic transport in van der Waals heterostructures composed of flakes of the antiferromagnetic Mott insulator a-RuCl_3 placed on top of monolayer graphene Hall bars. While the zero-field transport shows a strong resemblance t
o that of isolated graphene, we find a consistently $p$-type Hall effect suggestive of multiband conduction, along with a non-monotonic and gate-voltage-dependent excursion of the resistivity at low temperatures that is reminiscent of transport in the presence of a magnetic phase transition. We interpret these data as evidence for charge transfer from graphene to a-RuCl_3 in an inhomogeneous device yielding both highly- and lightly-doped regions of graphene, while the latter shows a particular sensitivity to magnetism in the a-RuCl_3. Thus proximity to graphene is a means to access magnetic properties of thin layers of magnetic insulators.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
