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We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local electrochemical potential of the liquid next to graphene that are caused by the fluid flow (streaming potential). Furthermore, we utilize the sensitivity of electrical transport in GraFETs to the parameters of the fluid flow to demonstrate graphene-based mass flow and ionic concentration sensing. We successfully detect a flow as small as~70nL/min, and detect a change in the ionic concentration as small as ~40nM.
Image potential states (IPSs) are electronic states localized in front of a surface in a potential well formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid a
The unique capabilities of capacitance measurements in bilayer graphene enable probing of layer-specific properties that are normally out of reach in transport measurements. Furthermore, capacitance measurements in the top-gate and penetration field
We propose Landau levels as a probe for the topological character of electronic bands in two-dimensional moire superlattices. We consider two configurations of twisted double bilayer graphene (TDBG) that have very similar band structures, but show di
We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indic
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present h