اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدTemperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
216
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.
قيم البحث
اقرأ أيضاً
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage
, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.
We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of high-freque
ncy electric fields, and the characterization of defect spin multiplicity. While we control defects in SiC, these methods apply to spin systems in many semiconductors, including the nitrogen-vacancy center in diamond. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.
Hybrid spin-mechanical systems are a promising platform for future quantum technologies. Usually they require application of additional microwave fields to project integer spin to a readable state. We develop a theory of optically detected spin-mecha
nical resonance associated with half-integer spin defects in silicon carbide (SiC) membranes. It occurs when a spin resonance frequency matches a resonance frequency of a mechanical mode, resulting in a shortening of the spin relaxation time through resonantly enhanced spin-phonon coupling. The effect can be detected as an abrupt reduction of the photoluminescence intensity under optical pumping without application of microwave fields. We propose all-optical protocols based on such spin-mechanical resonance to detect external magnetic fields and mass with ultra-high sensitivity. We also discuss room-temperature nonlinear effects under strong optical pumping, including spin-mediated cooling and heating of mechanical modes. Our approach suggests a new concept for quantum sensing using spin-optomechanics.
We demonstrate electrical detection of the $^{14}$N nuclear spin coherence of NV centers at room temperature. Nuclear spins are candidates for quantum memories in quantum-information devices and quantum sensors, and hence the electrical detection of
nuclear spin coherence is essential to develop and integrate such quantum devices. In the present study, we used a pulsed electrically detected electron-nuclear double resonance technique to measure the Rabi oscillations and coherence time ($T_2$) of $^{14}$N nuclear spins in NV centers at room temperature. We observed $T_2 approx$ 0.9 ms at room temperature. Our results will pave the way for the development of novel electron- and nuclear-spin-based diamond quantum devices.
The ability to probe the spin properties of solid state systems electrically underlies a wide variety of emerging technology. Here, we extend electrical readout of the nuclear spin states of phosphorus donors in silicon to the coherent regime with mo
dified Hahn echo sequences. We find that, whilst the nuclear spins have electrically detected phase coherence times exceeding 2 ms, they are nonetheless limited by the artificially shortened lifetime of the probing donor electron.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
