اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSolid-to-solid phase transition from amorphous carbon to graphite nanocrystal induced by intense femtosecond x-ray pulses
163
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present the results of an experiment where amorphous carbon was irradiated by femtosecond x-ray free electron laser pulses. The 830 eV laser pulses induce a phase transition in the material which is characterized ex-situ. The phase transition energy threshold is determined by measuring the surface of each irradiated area using an optical Nomarski microscope. The threshold fluence is found to be 282 +/- 11 mJ/cm^2, corresponding to an absorbed dose at the surface of 131 +/-5 meV/atom. Atomic force microscopy measurements show volume expansion of the irradiated sample area, suggesting a solid to solid phase transition. Deeper insight into the phase transition is gained by using scanning photoelectron microscopy and micro-Raman spectroscopy. Photoelectron microscopy shows graphitization, i.e. modification from sp3 to sp2 hybridization, of the irradiated material. The micro-Raman spectra show the appearance of local order, i.e. formation of graphite nanocrystals. Finally, the nature of the phase transition is discussed, taking into account previous theory and experimental results.
قيم البحث
اقرأ أيضاً
While crystalline two-dimensional materials have become an experimental reality during the past few years, an amorphous 2-D material has not been reported before. Here, using electron irradiation we create an sp2-hybridized one-atom-thick flat carbon
membrane with a random arrangement of polygons, including four-membered carbon rings. We show how the transformation occurs step-by-step by nucleation and growth of low-energy multi-vacancy structures constructed of rotated hexagons and other polygons. Our observations, along with first-principles calculations, provide new insights to the bonding behavior of carbon and dynamics of defects in graphene. The created domains possess a band gap, which may open new possibilities for engineering graphene-based electronic devices.
We present neutron scattering measurements of the dynamic structure factor, $S(Q,omega)$, of amorphous solid helium confined in 47 $AA$ pore diameter MCM-41 at pressure 48.6 bar. At low temperature, $T$ = 0.05 K, we observe $S(Q,omega)$ of the confin
ed quantum amorphous solid plus the bulk polycrystalline solid between the MCM-41 powder grains. No liquid-like phonon-roton modes, other sharply defined modes at low energy ($omega<$ 1.0 meV) or modes unique to a quantum amorphous solid that might suggest superflow are observed. Rather the $S(Q,omega)$ of confined amorphous and bulk polycrystalline solid appear to be very similar. At higher temperature ($T>$ 1 K), the amorphous solid in the MCM-41 pores melts to a liquid which has a broad $S(Q,omega)$ peaked near $omega simeq$ 0 characteristic of normal liquid $^4$He under pressure. Expressions for the $S(Q,omega)$ of amorphous and polycrystalline solid helium are presented and compared. In previous measurements of liquid $^4$He confined in MCM-41 at lower pressure the intensity in the liquid roton mode decreases with increasing pressure until the roton vanishes at the solidification pressure (38 bars), consistent with no roton in the solid observed here.
The evolution of the bismuth crystal structure upon excitation of its A$_{1g}$ phonon has been intensely studied with short pulse optical lasers. Here we present the first-time observation of a hard x-ray induced ultrafast phase transition in a bismu
th single crystal, at high intensities (~$10^{14}$ W/cm$^2$). The lattice evolution was followed using a recently demonstrated x-ray single-shot probing setup. The time evolution of the (111) Bragg peak intensity showed strong dependence on the excitation fluence. After exposure to a sufficiently intense x-ray pulse, the peak intensity dropped to zero within 300fs, i.e. faster than one oscillation period of the A1g mode at room temperature. Our analysis indicates a nonthermal origin of a lattice disordering process, and excludes interpretations based on electron-ion equilibration process, or on thermodynamic heating process leading to a plasma formation.
We have studied solid hydrogen under pressure at low temperatures. With increasing pressure we observe changes in the sample, going from transparent, to black, to a reflective metal, the latter studied at a pressure of 495 GPa. We have measured the r
eflectance as a function of wavelength in the visible spectrum finding values as high as 0.90 from the metallic hydrogen. We have fit the reflectance using a Drude free electron model to determine the plasma frequency of 30.1 eV at T= 5.5 K, with a corresponding electron carrier density of 6.7x1023 particles/cm3, consistent with theoretical estimates. The properties are those of a metal. Solid metallic hydrogen has been produced in the laboratory.
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates were measured with a time-resolved reflectivity (TRR) system be
tween 300 and 540 degC and found to have an activation energy of (2.15 +/- 0.04) eV. To interpret the TRR measurements the refractive indices of the a-Ge layers were measured at the two wavelengths used, 1.152 and 1.532 {mu}m. For the first time, SPE rate measurements on thick a-Ge layers (>3 {mu}m) have also been performed to distinguish between bulk and near-surface SPE growth rate behavior. Possible effects of explosive crystallization on thick a-Ge layers are considered. When H is present in a-Ge it is found to have a considerably greater retarding affect on the SPE rate than for similar concentrations in a-Si layers. Hydrogen is found to reduce the pre-exponential SPE velocity factor but not the activation energy of SPE. However, the extent of H indiffusion into a-Ge surface layers during SPE is about one order of magnitude less that that observed for a-Si layers. This is thought to be due to the lack of a stable surface oxide on a-Ge. Dopant enhanced kinetics were measured in a-Ge layers containing uniform concentration profiles of implanted As or Al spanning the concentration regime 1-10 x1019 /cm-3. Dopant compensation effects are also observed in a-Ge layers containing equal concentrations of As and Al, where the SPE rate is similar to the intrinsic rate. Various SPE models are considered in light of these data.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
