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We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, Co$_{2}$FeSi (CFS) or Fe$_{3}$Si (FS). The magnitude of the nonlocal spin-valve (NLSV) signals is seriously affected by the dispersion of the resistivity peculiarly observed in the low-temperature grown Heusler compounds with ordered structures. From the analysis based on the one-dimensional spin diffusion model, we find that the spin polarization monotonically increases with decreasing the resistivity, which depends on the structural ordering, for both CFS and FS electrodes, and verify that CFS has relatively large spin polarization compared with FS.
Using low-temperature molecular beam epitaxy, we study substitutions of Fe atoms for Co ones in Co_3-xFe_xSi Heusler-compound films grown on Si and Ge. Even for the low-temperature grown Heusler-compound films, the Co-Fe atomic substitution at A and
Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO)5, and neopentasilane, Si5H12 as precursor gases. The fabrication procedure consisted in preparing multilayer
In spin transport experiments with spin currents propagating through antiferromagnetic (AFM) material, the antiferromagnet is treated as a mainly passive spin conductor not generating nor adding any spin current to the system. The spin current transm
Ferromagnetic resonance (FMR) technique has been used to study the magnetization relaxation processes and magnetic anisotropy in two different series of the Co2FeSi (CFS) Heusler alloy thin films, deposited on the Si(111) substrate by UHV sputtering.
We demonstrate first measurements of successful spin generation in crystalline Co$_2$FeSi/MgO/GaAs hybrid structures grown by molecular-beam epitaxy (MBE), with different MgO interlayer thicknesses. Using non-local spin valve and non-local Hanle meas