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Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15%$) grown by molecular beam epitaxy on sapphire substrates. It is found that the films have a nanocrystalline structure with the grain size decreased from $sim150$ down to $28$ nm at changing the $Co$ concentration from $5$ to $15%$. High-resolution SEM images of $Zn_{0.85}Co_{0.15}O$ film have been interpreted as inhomogeneous lateral distribution of $Co$ atoms. Two broad emission bands observed in spectra of band-to-band PL are ascribed to emission from $Zn_{1-x}Co_xO$ nano-regions enriched and depleted with $Co$. In low-temperature PL spectra under sub-band excitation of $Zn_{1-x}Co_xO$ films, there observed are intra-center optical transitions due to $Co^{2+}$ center: $^2E(G)$, $^2A_1(G)$, $^2T_1(G)$, $^4T_1(P)$, $^2T_2(G)$ $longrightarrow$ $^4A_2(F)$. Offered is a new approach to interpretation of resonant enhancement observed in multi-phonon scattering by $LO$ phonons in $Zn_{1-x}Co_xO$ under sub-bandgap excitation combined with the extrinsic Fr{o}hlich interaction mediated via a localized exciton bound to the isoelectronic impurity in which the electron is strongly localized at the magnetic $Co^{2+}$ ion. This conclusion is confirmed by the dependence of Raman spectra on the quantum energy of exciting radiation. It assumes formation of intermediated sub-band electron excited states of isoelectron $Co$ dopant, they are also referred to as charge transfer processes.
ZnCoO is one of the most studied and promising semiconductor materials for spintronics applications. In this work we discuss optical and electrical properties of ZnCoO films and nanoparticles grown at low temperature by either Atomic Layer Deposition
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