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In this paper we examine the effects of electron-hole asymmetry as a consequence of strong correlations on the electronic Raman scattering in the normal state of copper oxide high temperature superconductors. Using determinant quantum Monte Carlo simulations of the single-band Hubbard model, we construct the electronic Raman response from single particle Greens functions and explore the differences in the spectra for electron and hole doping away from half filling. The theoretical results are compared to new and existing Raman scattering experiments on hole-doped La$_{2-x}$Sr$_{x}$CuO$_{4}$ and electron-doped Nd$_{2-x}$Ce$_{x}$CuO$_{4}$. These findings suggest that the Hubbard model with fixed interaction strength qualitatively captures the doping and temperature dependence of the Raman spectra for both electron and hole doped systems, indicating that the Hubbard parameter U does not need to be doping dependent to capture the essence of this asymmetry.
The three-band model relevant to high temperature copper-oxide superconductors is solved using single-site dynamical mean field theory and a tight-binding parametrization of the copper and oxygen bands. For a band filling of one hole per unit cell th
Understanding the link between a charge density wave (CDW) instability and superconductivity is a central theme of the 2D metallic kagome compounds $A$V$_3$Sb$_5$ ($A$=K, Rb, and Cs). Using polarization-resolved electronic Raman spectroscopy, we shed
We investigate the cross-over temperature T* as a function of doping in (Ca_{x}La_{1-x})(Ba_{1.75-x}La_{0.25+x})Cu_3O_{y}, where the maximum Tc (Tc^max) varies continuously by 30% between families (x) with minimal structural changes. T* is determined
The low-frequency dielectric response of hole-doped insulators La_{2}Cu_{1-x}Li_{x}O_{4} and La_{2-x}Sr_{x}NiO_{4} shows a large dielectric constant epsilon ^{} at high temperature and a step-like drop by a factor of 100 at a material-dependent low t
We apply the recent wavepacket formalism developed by Ossadnik to describe the origin of the short range ordered pseudogap state as the hole doping is lowered through a critical density in cuprates. We argue that the energy gain that drives this prec