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تسجيل مستخدم جديدThe role of magnetic anisotropy in spin filter junctions
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We have fabricated oxide based spin filter junctions in which we demonstrate that magnetic anisotropy can be used to tune the transport behavior of spin filter junctions. Until recently, spin filters have been largely comprised of polycrystalline materials where the spin filter barrier layer and one of the electrodes are ferromagnetic. These spin filter junctions have relied on the weak magnetic coupling between one ferromagnetic electrode and a barrier layer or the insertion of a nonmagnetic insulating layer in between the spin filter barrier and electrode. We have demonstrated spin filtering behavior in La0.7Sr0.3MnO3/chromite/Fe3O4 junctions without nonmagnetic spacer layers where the interface anisotropy plays a significant role in determining transport behavior. Detailed studies of chemical and magnetic structure at the interfaces indicate that abrupt changes in magnetic anisotropy across the non-isostructural interface is the cause of the significant suppression of junction magnetoresistance in junctions with MnCr2O4 barrier layers.
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agnetic resonance spectroscopy. Compare with cubic substrates a small (about 0.3 persentage), the anisotropy of the orthorhombic NGO substrate leads to a uniaxial anisotropy of the magnetic properties of the films in the plane of the substrate. Samples with different tilt of crystallographic basal planes of manganite as well as bicrystal junctions with rotation of the crystallographic axes (RB - junction) and with tilting of basal planes (TB - junction) were investigated. It was found that on vicinal NGO substrates the value of magnetic anisotropy could be varied by changing the substrate inclination angle from 0 to 25 degrees. Measurement of magnetic anisotropy of manganite bicrystal junction demonstrated the presence of two ferromagnetically ordered spin subsystems for both types of bicrystal boundaries RB and TB. The magnitude of the magnetoresistance for TB - junctions increased with decreasing temperature and with the misorientation angle even misorientation of easy axes in the parts of junction does not change. Analysis of the voltage dependencies of bicrystal junction conductivity show that the low value of the magnetoresistance for the LSMO bicrystal junctions can be caused by two scattering mechanisms with the spin- flip of spin - polarized carriers due to the strong electron - electron interactions in a disordered layer at the bicrystal boundary at low temperatures and the spin-flip by anti ferromagnetic magnons at high temperatures.
Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy value. It
is demonstrated that the origin of the large PMA values is far beyond simply considering the hybridization between Fe-3d$ and O-2p orbitals at the interface between the metal and the insulator. On-site projected analysis show that the anisotropy energy is not localized at the interface but it rather propagates into the bulk showing an attenuating oscillatory behavior which depends on orbital character of contributing states and interfacial conditions. Furthermore, it is found in most situations that states with $d_{yz(xz)}$ and $d_{z^2}$ character tend always to maintain the PMA while those with $d_{xy}$ and $d_{x^2-y^2}$ character tend to favor the in-plane anisotropy. It is also found that while MgO thickness has no influence on PMA, the calculated perpendicular magnetic anisotropy oscillates as a function of Fe thickness with a period of 2ML and reaches a maximum value of 3.6 mJ/m$^2$.
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