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تسجيل مستخدم جديدExperimental characterization of the electronic structure of anatase TiO2: Thermopower modulation
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Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 {mu}V/K, which is an order magnitude smaller than that of semiconductors (-198 {mu}V/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.
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