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The epitaxial growth of complex oxide thin films provide three avenues to generate unique properties: the ability to influence the 3-dimensional structure of the film, the presence of a surface, and the generation of an interface. In all three cases, a clear understanding of the resulting atomic structure is desirable. However, determining the full structure of an epitaxial thin film (lattice parameters, space group, atomic positions, surface reconstructions) on a routine basis is a serious challenge. In this paper we highlight the remarkable information that can be extracted from both the Bragg scattering and inelastic multiple scattering events that occur during Reflection High Energy Electron Diffraction. We review some methods to extract structural information and show how mature techniques used in other fields can be directly applied to the {em in-situ} and real-time diffraction images of a growing film. These collection of techniques give access to both the epitaxially influenced 3 dimensional bulk structure of the film, and any reconstructions that may happen at the surface.
We have investigated the atomic structure of superconducting Ca-intercalated bilayer graphene on a SiC(0001) substrate using total-reflection high-energy positron diffraction. By comparing the experimental rocking-curves with ones calculated for vari
We report on the crystallographic structure of the layered compound Pb3Mn7O15. Previous analysis based on laboratory X-ray data at room temperature gave contradictory results in terms of the description of the unit cell. Motivated by recent magnetic
We performed high-pressure angle dispersive x-ray diffraction measurements on Fe5Si3 and Ni2Si up to 75 GPa. Both materials were synthesized in bulk quantities via a solid-state reaction. In the pressure range covered by the experiments, no evidence
SrMoO4 was studied under compression up to 25 GPa by angle-dispersive x-ray diffraction. A phase transition was observed from the scheelite-structured ambient phase to a monoclinic fergusonite phase at 12.2(9) GPa with cell parameters a = 5.265(9) A,
We present low-energy electron diffraction (LEED) as elastic electron-atom scattering (EEAS) operating in a target crystal waveguide where a Coulombic carrier wave is wavenumber modulated by exchange-correlation (XC) interaction. Carrier potential is