اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدAcoustic Phonon Tunneling and Heat Transport due to Evanescent Electric Fields
52
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The authors describe how acoustic phonons can directly tunnel through vacuum and, therefore, transmit energy and conduct heat between bodies that are separated by a vacuum gap. This effect is enabled by introducing a coupling mechanism, such as piezoelectricity, that strongly couples electric field and lattice deformation. The electric field leaks into the vacuum as an evanescent field, which leads to finite solid-vacuum-solid transmission probability. Due to strong resonances in the system some phonons can go through the vacuum gap with (or close to) unity transmission, which leads to significant thermal conductance and heat flux.
قيم البحث
اقرأ أيضاً
State of the art nanomechanical resonators present quality factors Q ~ 10^3 - 10^5, which are much lower than those that can be naively extrapolated from the behavior of micromechanical resonators. We analyze the dissipation mechanism that arises in
nanomechanical beam-structures due to the tunneling of mesoscopic phonons between the beam and its supports (known as clamping losses). We derive the environmental force spectral density that determines the quantum Brownian motion of a given resonance. Our treatment is valid for low frequencies and provides the leading contribution in the aspect ratio. This yields fundamental limits for the Q-values which are described by simple scaling laws and are relevant for state of the art experimental structures. In this context, for resonant frequencies in the 0.1-1GHz range, while this dissipation mechanism can limit flexural resonators it is found to be negligible for torsional ones. In the case of structureless 3D supports the corresponding environmental spectral densities are Ohmic for flexural resonators and super-Ohmic for torsional ones, while for 2D slab supports they yield 1/f noise. Furthermore analogous results are established for the case of suspended semiconducting single-walled carbon nanotubes. Finally, we provide a general expression for the spectral density that allows to extend our treatment to other geometries and illustrate its use by applying it to a microtoroid. Our analysis is relevant for applications in high precision measurements and for the prospects of probing quantum effects in a macroscopic mechanical degree of freedom.
We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the $I(V)$ characteristics measured at 30mK, the contribution of individual donors is resolved and the fin
gerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed.
Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron
charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications.
We study the heat transport along an edge state of a two-dimensional electron gas in the quantum Hall regime, in contact to two reservoirs at different temperatures. We consider two exactly solvable models for the edge state coupled to the reservoirs
. The first one corresponds to filling $ u=1$ and tunneling coupling to the reservoirs. The second one corresponds to integer or fractional filling of the sequence $ u=1/m$ (with $m$ odd), and capacitive coupling to the reservoirs. In both cases we solve the problem by means of non-equilibrium Green function formalism. We show that heat propagates chirally along the edge in the two setups. We identify two temperature regimes, defined by $Delta$, the mean level spacing of the edge. At low temperatures, $T< Delta$, finite size effects play an important role in heat transport, for both types of contacts. The nature of the contacts manifest themselves in different power laws for the thermal conductance as a function of the temperature. For capacitive couplings a highly non-universal behavior takes place, through a prefactor that depends on the length of the edge as well as on the coupling strengths and the filling fraction. For larger temperatures, $T>Delta$, finite-size effects become irrelevant, but the heat transport strongly depends on the strength of the edge-reservoir interactions, in both cases. The thermal conductance for tunneling coupling grows linearly with $T$, whereas for the capacitive case it saturates to a value that depends on the coupling strengths and the filling factors of the edge and the contacts.
The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical results obt
ained from a tight-binding lattice description. A spectral gap, which may originate from strain effects, additional adsorbed atoms or substrate-induced sublattice-symmetry breaking, allows for bound and scattering states. As long as the diameter of the dot is much larger than the lattice constant, the results of the continuum and the lattice model are in very good agreement. We also investigate the influence of a sloping dot-potential step, of on-site disorder along the sample edges, of uncorrelated short-range disorder potentials in the bulk, and of random magnetic-fluxes that mimic ripple-disorder. The quantum dots spectral and transport properties depend crucially on the specific type of disorder. In general, the peaks in the density of bound states are broadened but remain sharp only in the case of edge disorder.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
