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We describe a novel GaAs/AlGaAs double-quantum-well device for the infrared photon detection, called Charge-Sensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal amplification by another QW as a channel with very high gain, which provides us with extremely high responsivity (10^4 -- 10^6 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 um) has an excellent sensitivity; the noise equivalent power (NEP) of 7x10^-19 W/rHz with the quantum efficiency of ~2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of >10^6, low output impedance of 10^3 -- 10^4 Ohms, and relatively high operation temperature (>2K). We discuss possible applications of the CSIP to FIR photon detection covering 35 -- 60 um waveband, which is a gap uncovered with presently available photoconductors.
UVSiPM is a light detector designed to measure the intensity of electromagnetic radiation in the 320-900 nm wavelength range. It has been developed in the framework of the ASTRI project whose main goal is the design and construction of an end-to-end
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We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthe
We present the SPICA Coronagraphic Instrument (SCI), which has been designed for a concentrated study of extra-solar planets (exoplanets). SPICA mission provides us with a unique opportunity to make high contrast observations because of its large tel
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