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Spin-pumping generates pure spin currents in normal metals at the ferromagnet (F)/normal metal (N) interface. The efficiency of spin-pumping is given by the spin mixing conductance, which depends on N and the F/N interface. We directly study the spin-pumping through an MgO tunnel-barrier using the inverse spin Hall effect, which couples spin and charge currents and provides a direct electrical detection of spin currents in the normal metal. We find that spin-pumping is suppressed by the tunnel-barrier, which is contrary to recent studies that suggest that the spin mixing conductance can be enhanced by a tunnel-barrier inserted at the interface.
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe st
We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct maximum in the t
We studied the response of a ferromagnet-insulator-normal metal tunnel structure under an external oscillating radio frequency (R.F.) magnetic field. The D. C. voltage across the junction is calculated and is found not to decrease despite the high re
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc, of the el
Heterostructures composed of ferromagnetic layers that are mutually interacting through a nonmagnetic spacer are at the core of magnetic sensor and memory devices. In the present study, layer-resolved ferromagnetic resonance was used to investigate t