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Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn.
Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and e
Magnetic topological materials, which combine magnetism and topology, are expected to host emerging topological states and exotic quantum phenomena. In this study, with the aid of greatly enhanced coercive fields in high-quality nanoflakes of the mag
We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities sigma_{xx} ranging from the low- to the high-conductivity regime. The anomalous Hall conductivity sigma_{xy}^(AH) is extra
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature depende
Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the crystallographic